• BSC010NE2LS
BSC010NE2LS

BSC010NE2LS

High power 8-pin TDSON EP package MOSFET

Quantity Unit Price(USD) Ext. Price
1 $1.358 $1.36
10 $1.152 $11.52
30 $1.025 $30.75
100 $0.892 $89.20
500 $0.833 $416.50
1000 $0.807 $807.00

Inventory:3,783

*The price is for reference only.
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Overview of BSC010NE2LS

The BSC010NE2LS is a MOSFET (N-Channel) optimized for high efficiency and low Rds(on) applications. It provides excellent performance for specific applications, such as motor control and power supplies.

Pinout

The BSC010NE2LS pinout refers to the configuration and function of each pin in its package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BSC010NE2LS has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • 2-channel N-channel Power MOSFET in a TO-263-3L package: This feature allows for high current handling and low Rds(on) applications.
  • Continuous Drain Current of 100 A: This feature enables high-power switching and efficient energy transfer.
  • Low On-Resistance of 1.1 mΩ at VGS = 10 V: This feature reduces energy losses and improves overall system performance.
  • Gate Threshold Voltage of 2 to 4 V: This feature enables reliable switching operations in various applications.
  • Fast Switching Speed and High Performance: This feature ensures high-speed operation, low latency, and improved system responsiveness.
  • Suitable for High Power Applications such as Motor Control and Power Supplies: This feature makes the BSC010NE2LS an excellent choice for demanding power applications.

Applications

  • Motor Control and Power Supplies: The BSC010NE2LS is well-suited for high-power switching applications, such as motor control and power supplies, requiring fast switching speeds and low Rds(on).
  • Suitable for Automotive, Industrial, and Consumer Electronics Applications: Due to its high current and voltage ratings, the BSC010NE2LS can be used in various applications across different industries.
  • High-Performance Applications: Its low on-resistance and fast switching capabilities make it ideal for demanding applications requiring high efficiency and performance.

Frequently Asked Questions

Q: What is the maximum drain current of the BSC010NE2LS?
A: The maximum drain current of the BSC010NE2LS is 100 A.

Q: What is the on-resistance of the BSC010NE2LS at VGS = 10 V?
A: The on-resistance of the BSC010NE2LS at VGS = 10 V is 1.1 mΩ.

Q: Is the BSC010NE2LS suitable for high-power applications?
A: Yes, the BSC010NE2LS is well-suited for high-power applications such as motor control and power supplies.

Q: Can I use the BSC010NE2LS in automotive, industrial, or consumer electronics applications?
A: Yes, the BSC010NE2LS can be used in various industries due to its high current and voltage ratings.

BSC010NE2LS

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BSC010NE2LS Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8 Reach Compliance Code not_compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 25 V
Drain Current-Max (Abs) (ID) 100 A Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0013 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 5 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form FLAT
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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BSC010NE2LS

High power 8-pin TDSON EP package MOSFET

Inventory:

3,783