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BQ4013YMA-70N

Battery-backed NVRAM with 5V operation

Inventory:9,521

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Overview of BQ4013YMA-70N

The BQ4013YMA-70N is a nonvolatile SRAM IC with a 1k-bit memory size and a 70ns access time. It features a serial interface for communication and operates within a wide voltage range, making it suitable for various memory storage applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • NC: No Connection
  • VCC: Positive Power Supply
  • VSS: Ground
  • SDA: Serial Data
  • SCL: Serial Clock
  • NC: No Connection
  • WP: Write Protect
  • IO/O: Bi-directional I/O
  • CE: Chip Enable


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BQ4013YMA-70N IC for a visual representation.

Key Features

  • Nonvolatile SRAM: The BQ4013YMA-70N combines the features of SRAM with nonvolatile storage, preserving data even without power.
  • 1k-Bit Memory Size: Offers a storage capacity of 1k bits for data retention.
  • 70ns Access Time: Provides fast access to stored data for efficient operation.
  • Wide Operating Voltage Range: Operates within a broad voltage range, ensuring compatibility with various systems.

Note: For detailed technical specifications, please refer to the BQ4013YMA-70N datasheet.

Application

  • Data Logging: Ideal for data logging applications where nonvolatile memory is required.
  • Embedded Systems: Suitable for use in embedded systems that need nonvolatile storage capabilities.
  • Industrial Automation: Used in industrial automation systems for storing critical operational data.

Functionality

The BQ4013YMA-70N is a nonvolatile SRAM IC that combines the speed of SRAM with the nonvolatile properties of EEPROM, providing reliable data storage and fast access in various applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 2) to the positive power supply and VSS (Pin 3) to ground.
  • Communication: Use the SDA and SCL pins for serial communication with the IC.
  • Write Protection: Utilize the WP pin to protect data from being overwritten.

Frequently Asked Questions

Q: Can the BQ4013YMA-70N be used in battery-powered devices?
A: Yes, the BQ4013YMA-70N's nonvolatile nature makes it suitable for battery-powered devices where data retention is essential.

Equivalent

For similar functionalities, consider these alternatives to the BQ4013YMA-70N:

  • DS1230AB-100: A nonvolatile SRAM IC with a 1k-bit memory size and similar operational characteristics.
  • FM1608-120-PG: This nonvolatile SRAM provides a 1k-bit memory size and fast access times for data storage applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NVRAM RoHS Details
Package / Case DIP-32 Module Interface Type Parallel
Memory Size 1 Mbit Organization 128 k x 8
Data Bus Width 8 bit Access Time 70 ns
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Operating Supply Current 50 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Series BQ4013Y
Brand Texas Instruments Height 9.4 mm
Length 42.8 mm Mounting Style Through Hole
Operating Supply Voltage 5 V Product Type NVRAM
Factory Pack Quantity 12 Subcategory Memory & Data Storage
Type NVSRAM Width 18.42 mm

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BQ4013YMA-70N

Battery-backed NVRAM with 5V operation

Inventory:

9,521