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BLF647P,112

RF Mosfet LDMOS (Dual)

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Overview of BLF647P,112

The BLF647P,112 is a NXP Semiconductors RF Power LDMOS Transistor designed for use in high-power RF applications. This transistor offers high efficiency and ruggedness, making it suitable for demanding RF power amplification needs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BLF647P,112 for a visual representation.

Key Features

  • High-Power RF Transistor: The BLF647P,112 is designed to deliver high RF power output for efficient amplification.
  • High Efficiency: This transistor offers high efficiency in converting DC power to RF power, reducing power losses.
  • Rugged Design: The BLF647P,112 is built to withstand high voltages and currents, ensuring reliability in demanding RF applications.
  • Wide Frequency Range: It operates over a wide frequency range, making it versatile for various RF communication systems.

Note: For detailed technical specifications, please refer to the BLF647P,112 datasheet.

Application

  • High-Power RF Amplification: Ideal for use in high-power RF amplifiers for applications such as broadcasting, radar, and communications.
  • RF Communication Systems: Suitable for integration into RF communication systems requiring high RF power output.
  • Amateur Radio: Used by radio enthusiasts and professionals in amateur radio equipment for increased transmission power.

Functionality

The BLF647P,112 RF Power LDMOS Transistor is optimized for high-power RF amplification, providing efficient and reliable performance in RF systems.

Usage Guide

  • Connect the Gate, Drain, and Source pins to their respective circuit connections according to the datasheet guidelines.
  • Ensure proper heat sinking to handle the power dissipation requirements of the transistor for optimal performance.

Frequently Asked Questions

Q: Is the BLF647P,112 suitable for continuous wave (CW) operation?
A: Yes, the BLF647P,112 is designed for reliable CW operation in high-power RF applications.

Equivalent

For similar functionalities, consider these alternatives to the BLF647P,112:

  • BLF177: Another high-power LDMOS transistor offering similar performance characteristics to the BLF647P,112.
  • MRFE6VP61K25H: A high-power RF LDMOS transistor from NXP with comparable power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors Technology Si
Id - Continuous Drain Current 100 mA Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 140 mOhms Mounting Style SMD/SMT
Package / Case SOT-1121A-5 Brand Ampleon
Product Type RF MOSFET Transistors Factory Pack Quantity 60
Subcategory MOSFETs Vgs - Gate-Source Voltage 11 V

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