• BLF647 SOT-540A
  • BLF647 SOT-540A
  • BLF647 SOT-540A
BLF647 SOT-540A
BLF647 SOT-540A
BLF647 SOT-540A

BLF647

Compact pin package for space-constrained desig

Inventory:6,152

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Overview of BLF647

The BLF647 is a high-power RF transistor designed for use in RF power amplification applications. This transistor features high efficiency and power gain, making it suitable for demanding RF amplification needs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • RF IN: RF input terminal
  • GND: Ground connection
  • VCC: Positive supply voltage
  • RF OUT: RF output terminal
  • DC: DC bias connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BLF647 RF transistor for a visual representation.

Key Features

  • High Power RF Transistor: The BLF647 is designed to handle high RF power levels efficiently.
  • Power Gain: Offers high power gain for effective RF amplification.
  • Efficiency: Provides high efficiency in converting DC power to RF power.
  • Wide Frequency Range: Operates over a wide frequency range, suitable for various RF applications.
  • Robust Design: Features a robust construction for reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the BLF647 datasheet.

Application

  • RF Power Amplification: Ideal for RF power amplification in transmitters, radar systems, and communication equipment.
  • Broadcasting: Suitable for use in broadcasting equipment for high-power RF signal transmission.
  • Wireless Communication: Used in wireless communication systems requiring high-power RF amplification.

Functionality

The BLF647 RF transistor is designed to amplify RF signals with high efficiency and power gain, making it a reliable choice for RF power amplification applications.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive supply voltage and the GND pin to ground.
  • Input/Output Connections: Connect the RF input signal to the RF IN pin and the amplified RF signal output to the RF OUT pin.
  • Biasing: Apply the appropriate DC biasing to the DC pin for optimal transistor operation.

Frequently Asked Questions

Q: Is the BLF647 suitable for broadband applications?
A: Yes, the BLF647's wide frequency range makes it suitable for broadband RF applications.

Equivalent

For similar functionalities, consider these alternatives to the BLF647:

  • BLF578: A high-power RF transistor with comparable performance characteristics to the BLF647.
  • AFT05MS031N: This is a RF LDMOS transistor that offers high power and efficiency for RF amplification.

BLF647

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Tray Part Status Obsolete
Technology LDMOS Configuration Dual, Common Source
Frequency 600MHz Gain 14.5dB
Voltage - Test 28 V Current Rating (Amps) 18A
Power - Output 120W Voltage - Rated 65 V
Mounting Type Chassis Mount Package / Case SOT-540A
Supplier Device Package LDMOST Base Product Number BLF647

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BLF647

Compact pin package for space-constrained desig

Inventory:

6,152