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BLF642,112

Discover BLF642,112, a robust MOSFET unit engineered to handle 35W power, housed in SOT-467C packaging and certified ROHS-compliant

Inventory:5,176

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Overview of BLF642,112

The BLF642,112 is a high-power LDMOS transistor designed for use in RF power amplification applications.This transistor offers high output power capability and efficiency,making it suitable for demanding RF communication systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BLF642,112 for a visual representation.

Key Features

  • High Power Capability:The BLF642,112 offers high output power handling capability,ideal for RF power amplification applications.
  • Efficiency:This LDMOS transistor provides high efficiency levels,helping to minimize power losses in RF systems.
  • Wide Frequency Range:With a broad frequency range,this transistor can be used in various RF communication systems.
  • Reliability:Designed for reliable performance,the BLF642,112 ensures stable operation in demanding environments.
  • Compact Design:Comes in a compact package,allowing for space-efficient integration into RF amplifier circuits.

Note:For detailed technical specifications,please refer to the BLF642,112 datasheet.

Application

  • RF Power Amplification:Ideal for use in RF power amplifiers for applications such as wireless communication and broadcasting.
  • Base Station Systems:Suitable for integration into base station systems to amplify RF signals for increased coverage and performance.
  • Radar Systems:Utilized in radar systems for signal amplification and transmission purposes.

Functionality

The BLF642,112 LDMOS transistor is specifically designed for high-power RF amplification,offering efficient and reliable amplification of RF signals in various communication systems.

Usage Guide

  • Connection:Connect the gate(G),drain(D),and source(S) pins to the corresponding RF circuit components based on the datasheet guidelines.
  • Power Supply:Ensure proper voltage and current requirements are met according to the datasheet specifications to maximize performance.

Frequently Asked Questions

Q:What is the maximum power output of the BLF642,112?
A:The BLF642,112 is capable of delivering high output power levels,suitable for demanding RF applications.

Q:Can the BLF642,112 operate over a wide frequency range?
A:Yes,the BLF642,112 covers a broad frequency range,making it versatile for various RF communication systems.

Equivalent

For similar functionalities,consider these alternatives to the BLF642,112:

  • BLF878:A high-power LDMOS transistor offering similar performance characteristics to the BLF642,112 for RF power amplification.
  • BLF888:This LDMOS transistor provides high efficiency and power handling capabilities,suitable for RF power amplifier applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status NRND
HTS 8541.29.00.75 Configuration Single
Channel Mode Enhancement Channel Type N
Number of Elements per Chip 1 Mode of Operation 2-Tone Class-AB|CW Class-AB
Process Technology LDMOS Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 11 Maximum VSWR 10
Maximum Drain Source Resistance (mOhm) 300(Typ)@6.15V Typical Input Capacitance @ Vds (pF) 39@32V
Typical Reverse Transfer Capacitance @ Vds (pF) 0.84@32V Typical Output Capacitance @ Vds (pF) 15@32V
Typical Forward Transconductance (S) 3.3 Output Power (W) 35(Typ)
Typical Power Gain (dB) 19 Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 1 Typical Drain Efficiency (%) 63
Minimum Operating Temperature (°C) -65 Maximum Operating Temperature (°C) 200
Packaging Bulk Mounting Screw
Package Height 4.67(Max) Package Width 5.97(Max)
Package Length 20.45(Max) PCB changed 3
Supplier Package LDMOST Pin Count 3

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BLF642,112

Discover BLF642,112, a robust MOSFET unit engineered to handle 35W power, housed in SOT-467C packaging and certified ROHS-compliant

Inventory:

5,176