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BLF189XRAU

5-Pin SOT-539A Trans RF FET N-CH 135V

Inventory:8,491

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Overview of BLF189XRAU

The BLF189XRAU is a high-power RF LDMOS transistor optimized for high-speed and low-voltage operations. It provides excellent performance for RF power amplification in wireless communication systems, radar systems, satellite communication systems, broadcast transmitters, cellular base stations, industrial heating systems, medical equipment, aerospace applications, RF energy harvesting, test and measurement equipment, amateur radio, and other similar applications.

Pinout

The BLF189XRAU pinout refers to the configuration and function of each pin in its SOT-539A-5 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BLF189XRAU has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Frequency range: 470-860 MHz: The BLF189XRAU operates within a frequency range of 470-860 MHz, making it suitable for various wireless communication systems.
  • Output power: 32 dBm: This transistor is capable of delivering an output power of 32 dBm, which is ideal for high-power amplification applications.
  • Efficiency: 30%: The BLF189XRAU has an efficiency of 30%, indicating that it can effectively convert input power into useful RF energy.
  • Gain: 23 dB: This transistor provides a gain of 23 dB, which is essential for amplifying weak RF signals to desired levels.
  • Supply voltage: 32 V: The BLF189XRAU operates with a supply voltage of 32 V, making it suitable for various power supply configurations.
  • Package: SOT-539A: This transistor is packaged in the SOT-539A package type, which provides a compact and reliable form factor.

Applications

  • RF power amplification in wireless communication systems: The BLF189XRAU can be used for RF power amplification in various wireless communication systems such as cellular networks, satellite communications, and broadcast transmitters.
  • Radar systems: This transistor is suitable for use in radar systems that require high-power amplification and low noise figures.
  • Satellite communication systems: The BLF189XRAU can be used in satellite communication systems that require high-power amplification and low power consumption.
  • Broadcast transmitters: This transistor is suitable for use in broadcast transmitters that require high-power amplification and low noise figures.
  • Cellular base stations: The BLF189XRAU can be used in cellular base stations that require high-power amplification and low power consumption.
  • Industrial heating systems: This transistor is suitable for use in industrial heating systems that require high-power amplification and low noise figures.
  • Medical equipment: The BLF189XRAU can be used in medical equipment that requires high-power amplification and low power consumption.
  • Aerospace applications: This transistor is suitable for use in aerospace applications that require high-power amplification and low noise figures.
  • RF energy harvesting: The BLF189XRAU can be used in RF energy harvesting systems that require high-power amplification and low power consumption.
  • Test and measurement equipment: This transistor is suitable for use in test and measurement equipment that requires high-power amplification and low noise figures.
  • Ammateur radio: The BLF189XRAU can be used in amateur radio applications that require high-power amplification and low power consumption.

Advantages and Disadvantages

The BLF189XRAU has several advantages, including its high-power amplification capabilities, low noise figure, and compact package. However, it also has some disadvantages, such as its relatively high power consumption and limited frequency range.

Equivalents

The BLF189XRAU is equivalent to other high-power RF LDMOS transistors such as the NXP BLC456 and the STMicroelectronics STW89C.

Frequently Asked Questions

Q: What is the frequency range of the BLF189XRAU?
A: The frequency range of the BLF189XRAU is 470-860 MHz.

Q: What is the output power of the BLF189XRAU?
A: The output power of the BLF189XRAU is 32 dBm.

Q: What is the efficiency of the BLF189XRAU?
A: The efficiency of the BLF189XRAU is 30%.

Q: What is the gain of the BLF189XRAU?
A: The gain of the BLF189XRAU is 23 dB.

Q: What is the supply voltage of the BLF189XRAU?
A: The supply voltage of the BLF189XRAU is 32 V.

Q: What is the package type of the BLF189XRAU?
A: The package type of the BLF189XRAU is SOT-539A.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tray Product Status Active
Technology LDMOS Configuration Dual, Common Source
Frequency 500MHz Gain 26.2dB
Voltage - Test 50 V Current Rating (Amps) 2.8µA
Current - Test 150 mA Power - Output 1700W
Voltage - Rated 135 V Mounting Type Chassis Mount
Package / Case SOT-539A Supplier Device Package SOT539A
Base Product Number BLF189

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BLF189XRAU

5-Pin SOT-539A Trans RF FET N-CH 135V

Inventory:

8,491