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BLF184XRU

High Frequency N-Channel FET

Inventory:7,864

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Overview of BLF184XRU

The BLF184XRU is a LDMOS power transistor designed for use in high-power RF applications.This transistor offers high output power capabilities and efficiency,making it suitable for various RF amplification requirements.

Key Features

  • High Power Output: The BLF184XRU provides high output power levels,suitable for RF amplification in demanding applications.
  • Efficient Operation: This LDMOS transistor offers high efficiency,helping to minimize power losses in RF systems.
  • Wide Frequency Range: The BLF184XRU operates across a wide frequency range,making it versatile for different RF applications.
  • Reliable Performance: With robust construction and design,the BLF184XRU delivers reliable performance in challenging RF environments.


Specifications

For detailed technical specifications of the BLF184XRU,please refer to the manufacturer's datasheet for precise information on electrical characteristics and performance ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors RoHS Details
Technology Si Id - Continuous Drain Current 100 mA
Vds - Drain-Source Breakdown Voltage 135 V Rds On - Drain-Source Resistance 160 mOhms
Mounting Style SMD/SMT Package / Case SOT-1214A
Brand NXP Semiconductors Product Type RF MOSFET Transistors
Factory Pack Quantity 60 Subcategory MOSFETs
Vgs - Gate-Source Voltage 11 V

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BLF184XRU

High Frequency N-Channel FET

Inventory:

7,864