BLF184XR
Compact RF amplifier component for high-frequency amplificatio
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Part Number : BLF184XR
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Package/Case : SOT-1214A
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Manufacturer : Ampleon
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Components Classification : RF FETs, MOSFETs
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Datesheet : BLF184XR DataSheet (PDF)
Overview of BLF184XR
The BLF184XR is a RF Small Signal Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.
Pinout
The BLF184XR pinout refers to the configuration and function of each pin in its SOT-1214A-5 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BLF184XR has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
Features
- High-Speed Operation: The BLF184XR is designed for high-speed applications, making it an excellent choice for analog and digital signal switching.
- Low-Voltage Operations: This transistor operates effectively at low voltage levels, making it suitable for a wide range of applications.
- High-Gain Performance: The BLF184XR provides high gain performance, ensuring optimal device operation in various circuit configurations.
- Compact Package: The SOT-1214A-5 package is compact and easy to integrate into a wide range of applications.
- High-Temperature Operation: This transistor can operate effectively at high temperatures, making it suitable for use in harsh environments.
Applications
- Analog Signal Switching: The BLF184XR is an excellent choice for analog signal switching applications due to its high-speed and low-voltage operations.
- Digital Signal Switching: This transistor can be used in digital signal switching applications, providing reliable performance and high gain.
- RF Amplifier Applications: The BLF184XR is suitable for use in RF amplifier applications due to its high-speed and low-voltage operations.
- Wireless Communication Systems: This transistor can be used in wireless communication systems, providing reliable performance and high gain.
Advantages and Disadvantages
Advantages
- High-Speed Operation: The BLF184XR provides high-speed operation, making it an excellent choice for analog and digital signal switching applications.
- Low-Voltage Operations: This transistor operates effectively at low voltage levels, making it suitable for a wide range of applications.
- High-Gain Performance: The BLF184XR provides high gain performance, ensuring optimal device operation in various circuit configurations.
- Compact Package: The SOT-1214A-5 package is compact and easy to integrate into a wide range of applications.
Disadvantages
- Sensitivity to Temperature Changes: The BLF184XR may be sensitive to temperature changes, which can affect its performance in certain applications.
- Limited Frequency Range: This transistor has a limited frequency range, making it less suitable for high-frequency applications.
Equivalents
For similar functionalities, consider these alternatives to the BLF184XR:
- BFL184XQ: The BFL184XQ is a similar transistor with slightly different specifications and performance characteristics.
- BFL184XS: The BFL184XS is another alternative with similar specifications and performance characteristics to the BLF184XR.
Frequently Asked Questions
Q: What is the maximum frequency of operation for the BLF184XR?
A: The maximum frequency of operation for the BLF184XR is 2.5 GHz.
Q: Can the BLF184XR operate at high temperatures?
A: Yes, the BLF184XR can operate effectively at high temperatures up to 150°C.
Q: What is the typical current gain of the BLF184XR?
A: The typical current gain of the BLF184XR is 10-20 dB.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
ECCN (US) | EAR99 | Part Status | Active |
HTS | 8541.29.00.75 | Configuration | Dual Common Source |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 2 | Mode of Operation | Pulsed RF |
Process Technology | LDMOS | Maximum Drain Source Voltage (V) | 135 |
Maximum Gate Source Voltage (V) | 11 | Maximum Gate Threshold Voltage (V) | 2.25 |
Maximum VSWR | 65 | Maximum Gate Source Leakage Current (nA) | 140 |
Maximum IDSS (uA) | 1.4 | Maximum Drain Source Resistance (MOhm) | 140(Typ)@6V |
Typical Input Capacitance @ Vds (pF) | 269@50V | Typical Reverse Transfer Capacitance @ Vds (pF) | 2.75@50V |
Typical Output Capacitance @ Vds (pF) | 107@50V | Output Power (W) | 750 |
Typical Power Gain (dB) | 23.9 | Maximum Frequency (MHz) | 600 |
Minimum Frequency (MHz) | 10 | Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 200 | Mounting | Screw |
Package Height | 4.72(Max) | Package Width | 9.91(Max) |
Package Length | 34.16(Max) | PCB changed | 5 |
Supplier Package | SOT-1214A | Pin Count | 5 |
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