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BFU520AR

BFU520AR: A Silicon RF Transistor with NPN Wideband Design

Inventory:6,836

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Overview of BFU520AR

The BFU520AR is a high-performance, dual-gate GaAs FET designed for use in low-noise, high-frequency amplifier and mixer applications. It features excellent noise and gain characteristics, making it well-suited for a variety of RF and microwave circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Drain 1 (D1)
  • Gate 1 (G1)
  • Source (S)
  • Gate 2 (G2)
  • Drain 2 (D2)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BFU520AR device for a visual representation.

Key Features

  • Dual-Gate GaAs FET Design: Provides improved performance and flexibility for a wide range of RF and microwave applications.
  • Low Noise Figure: Offers excellent noise figure characteristics, typically less than 1.5 dB at 2 GHz, ensuring low-noise amplification.
  • High Gain: Achieves high power gain, typically around 16 dB at 2 GHz, enabling efficient signal amplification.
  • Broad Frequency Range: Operates from DC to 12 GHz, suitable for a variety of high-frequency applications.
  • Rugged Construction: Utilizes a robust package design to withstand harsh environmental conditions.

Note: For detailed technical specifications, please refer to the BFU520AR datasheet.

Application

  • Low-Noise Amplifiers (LNAs): The BFU520AR is commonly used in the input stages of LNAs for receiver applications, leveraging its low noise figure.
  • Mixers and Frequency Converters: The dual-gate structure allows the BFU520AR to be used as a high-performance mixer or frequency converter in RF and microwave circuits.
  • Oscillators and VCOs: The BFU520AR can be employed in the design of oscillators and voltage-controlled oscillators (VCOs) for frequency generation.

Functionality

The BFU520AR is a dual-gate GaAs FET that provides excellent noise and gain characteristics, making it suitable for a wide range of RF and microwave applications, particularly in the design of low-noise amplifiers, mixers, and oscillators.

Usage Guide

  • Power Supply: Connect the appropriate power supply voltages to the Drain 1 (D1), Drain 2 (D2), and Source (S) pins.
  • Input/Output Connections: Connect the input and output signals to the Gate 1 (G1) and Gate 2 (G2) pins, respectively, based on the specific circuit design requirements.
  • Grounding: Ensure proper grounding of the Source (S) pin to provide a stable ground reference for the device.

Frequently Asked Questions

Q: What is the maximum operating frequency of the BFU520AR?
A: The BFU520AR is designed to operate up to 12 GHz, making it suitable for a wide range of high-frequency applications.

Q: Can the BFU520AR be used in high-power applications?
A: No, the BFU520AR is not recommended for high-power applications due to its power handling limitations. It is better suited for low-power, high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the BFU520AR:

  • ATF-54143: A dual-gate GaAs FET from Avago Technologies with comparable performance characteristics to the BFU520AR.
  • MGF4919G: A dual-gate GaAs FET from Mitsubishi Electric, offering similar noise figure and gain specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

orderingCode 934067697215 isDistributor true
isReqSample true salesNum BFU520AR
leadTime 13 requaestItemType REQUEST_SAMPLE
pack_type REEL price_flg Y
pack_desc Reel 7" Q3/T4 minPackQty 3000
status Active

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BFU520AR

BFU520AR: A Silicon RF Transistor with NPN Wideband Design

Inventory:

6,836