• BFR93AW SC-70-3
BFR93AW SC-70-3

BFR93AW

Ideal for use in amplifiers, switches, and voltage regulators due to its high-gain amplifier performance and low noise figure

Quantity Unit Price(USD) Ext. Price
900 $0.165 $148.50
600 $0.168 $100.80
300 $0.174 $52.20
1 $0.450 $0.45

Inventory:4,177

*The price is for reference only.
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Overview of BFR93AW

The BFR93AW is a NPN silicon RF transistor designed for high-frequency applications in radio frequency (RF) circuits. It features high power gain and low noise performance, making it suitable for use in amplifiers, oscillators, and RF signal processing circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Emitter terminal
  • Base (B): Base terminal
  • Collector (C): Collector terminal

Circuit Diagram

Include a circuit diagram illustrating the usage of the BFR93AW transistor in an RF circuit for a visual representation.

Key Features

  • High Power Gain: The BFR93AW offers high power gain, making it suitable for RF amplification applications.
  • Low Noise Figure: With low noise performance, this transistor is ideal for applications requiring minimal signal distortion.
  • Wide Frequency Range: Operates over a wide frequency range, enabling use in various RF circuit designs.
  • Compact Package: Available in a small SOT343 package, suitable for space-constrained applications.
  • High Reliability: Designed for high reliability and performance consistency in RF circuits.

Note: For detailed technical specifications, please refer to the BFR93AW datasheet.

Application

  • RF Amplification: Ideal for use in RF amplifiers to boost signal strength in communication systems.
  • Oscillator Circuits: Suitable for oscillator applications where stable RF signal generation is required.
  • RF Signal Processing: Used in various RF signal processing circuits for applications such as filtering and modulation.

Functionality

The BFR93AW transistor is designed to amplify RF signals with high gain and low noise, ensuring signal integrity in RF circuits.

Usage Guide

  • Biasing: Proper biasing of the base terminal is essential for optimal performance in amplification circuits.
  • Matching Networks: Use matching networks to optimize impedance matching and maximize power transfer.
  • Thermal Considerations: Ensure proper heat dissipation to maintain transistor performance and reliability.

Frequently Asked Questions

Q: Is the BFR93AW suitable for low-power RF applications?
A: Yes, the BFR93AW's low noise figure makes it suitable for low-power RF signal processing applications.

Equivalent

For similar functionalities, consider these alternatives to the BFR93AW:

  • BFR96: Another NPN RF transistor with similar performance characteristics to the BFR93AW.
  • BFU520W: This transistor offers high power gain and low noise for RF applications, comparable to the BFR93AW.

BFR93AW

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BFR93AW Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC Reach Compliance Code

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BFR93AW

Ideal for use in amplifiers, switches, and voltage regulators due to its high-gain amplifier performance and low noise figure

Inventory:

4,177