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BFR31,215

Transistor with N-type Channel and 3 Pins

Inventory:7,009

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Overview of BFR31,215

The BFR31,215 is a NPN 8 GHz wideband transistor designed for high-frequency applications. This transistor features high gain and low noise performance, making it ideal for use in RF amplification circuits and applications that require high-speed signal processing.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Supplies current to the transistor
  • Base (B): Controls the flow of current through the transistor
  • Collector (C): Collects current from the transistor


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BFR31,215 transistor for a visual representation.

Key Features

  • High-Frequency Operation: With a bandwidth of 8 GHz, the BFR31,215 is suitable for high-frequency applications requiring wideband performance.
  • High Gain: The transistor offers high gain characteristics, making it efficient for signal amplification in RF circuits.
  • Low Noise: Featuring low noise performance, the BFR31,215 is ideal for applications where signal fidelity is crucial.
  • Compact Package: Available in a small form factor package, the transistor can be easily integrated into compact electronic designs.

Note: For detailed technical specifications, please refer to the BFR31,215 datasheet.

Application

  • RF Amplification: Ideal for RF amplifier circuits in communication systems, radar systems, and high-frequency applications.
  • Signal Processing: Suitable for high-speed signal processing applications where low noise and high gain are essential.
  • Frequency Synthesis: The transistor can be utilized in frequency synthesis circuits for generating high-frequency signals.

Functionality

The BFR31,215 NPN transistor is designed for high-frequency operation with excellent gain and low noise characteristics. It is a versatile component for various RF and signal processing applications.

Usage Guide

  • Connection: Connect the emitter, base, and collector pins of the transistor to the corresponding circuit elements while following the correct biasing conditions.
  • Biasing: Ensure proper biasing of the transistor to achieve optimal performance in high-frequency circuits.
  • Matching: It is important to match the impedance levels of the transistor with the surrounding circuit components for efficient signal transfer.

Frequently Asked Questions

Q: What is the bandwidth of the BFR31,215 transistor?
A: The BFR31,215 transistor has a bandwidth of 8 GHz, suitable for high-frequency applications.

Q: Can the BFR31,215 be used for low noise amplification?
A: Yes, the BFR31,215 transistor offers low noise performance, making it well-suited for applications requiring low noise amplification.

Equivalent

For similar functionalities, consider these alternatives to the BFR31,215:

  • BFR92A: Another high-frequency NPN transistor suitable for RF applications requiring wideband performance.
  • BFT66: A high-gain NPN transistor with good noise characteristics for RF amplification and signal processing.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

orderingCode 933163490215 isDistributor false
salesNum BFR31,215 leadTime 99
pack_type REEL price_flg Y
pack_desc Reel 7" Q3/T4 minPackQty 3000
status No Longer Manufactured

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BFR31,215

Transistor with N-type Channel and 3 Pins

Inventory:

7,009