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BFR193W

12V NPN Transistor

Inventory:6,324

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Overview of BFR193W

NPN Silicon RF Transistor• For low noise, high-gain amplifiers up to 2 GHz• For linear broadband amplifiers• fT = 8 GHz F = 1.3 dB at 900 MHz

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BFR193W Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature LOW NOISE
Collector Current-Max (IC) 0.08 A Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V Configuration SINGLE
Highest Frequency Band L BAND JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.58 W Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 8000 MHz
Package SOT323 VCEO max 12.0 V
IC max 80.0 mA NFmin 1 dB @900 MHz
Gmax 16 dB @900 MHz OIP3 30 dBm @900 MHz
OP1dB 13 dBm @900 MHz

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