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BFP640ESD

NPN RF Bipolar Transistor, X Band, Silicon Germanium Carbon, Plastic Package-4, Halogen-Free, RoHS Compliant, 0.05A Collector Current

Inventory:6,874

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Overview of BFP640ESD

NPN Silicon Germanium RF Transistor• High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz• High maximum stable gain Gms = 24 dB at 1.8 GHz• Gold metallization for extra high reliability• 70 GHz fT-Silicon Germanium technology• Pb-free (RoHS compliant) package1)• Qualified according AEC Q101

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BFP640ESD Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Collector Current-Max (IC) 0.05 A Collector-Emitter Voltage-Max 4.1 V
Configuration SINGLE DC Current Gain-Min (hFE) 110
Highest Frequency Band X BAND JESD-30 Code R-PDSO-G4
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 4
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON GERMANIUM CARBON Transition Frequency-Nom (fT) 46000 MHz
Package SOT343 VCEO max 4.1 V
IC max 50.0 mA NFmin 0.60 dB @900 MHz
Gmax 28 dB @900 MHz

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