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BFP640

RF Bipolar Transistors

Inventory:7,021

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Overview of BFP640

NPN Silicon Germanium RF Transistor• High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz• High maximum stable gain Gms = 24 dB at 1.8 GHz• Gold metallization for extra high reliability• 70 GHz fT-Silicon Germanium technology• Pb-free (RoHS compliant) package1)• Qualified according AEC Q101

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid BFP640 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Additional Feature LOW NOISE, HIGH RELIABILITY Case Connection EMITTER
Collector Current-Max (IC) 0.05 A Collector-Base Capacitance-Max 0.2 pF
Collector-Emitter Voltage-Max 4 V Configuration SINGLE
DC Current Gain-Min (hFE) 110 Highest Frequency Band C BAND
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W Qualification Status Not Qualified
Reference Standard AEC-Q101 Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON GERMANIUM Transition Frequency-Nom (fT) 40000 MHz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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