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BDX63B

Trans Darlington NPN 100V 8A 90000mW 3-Pin(2+Tab) TO-3

Inventory:4,008

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Overview of BDX63B

The BDX63B is a Darlington Bipolar Junction Transistor (BJT) optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The BDX63B pinout refers to the configuration and function of each pin in its TO-3-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BDX63B has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High-Speed Operation: The BDX63B is designed for high-speed applications, making it suitable for use in modern electronic systems.
  • Low-Voltage Operations: This transistor can operate at low voltage levels, making it ideal for battery-powered or low-voltage applications.
  • High Current Handling: The BDX63B has a high current handling capacity, making it suitable for use in applications that require high currents.
  • High Power Dissipation: This transistor can handle high power dissipation levels, making it suitable for use in applications that generate high heat.
  • Compact Package: The BDX63B comes in a compact TO-3-3 package, making it ideal for use in space-constrained electronic systems.

Applications

  • Analog and Digital Signal Switching: The BDX63B is suitable for use in analog and digital signal switching applications where high-speed and low-voltage operations are required.
  • Pulse Generators: This transistor can be used in pulse generators that require high current handling and high power dissipation levels.
  • Power Supplies: The BDX63B is suitable for use in power supplies that require high-speed and low-voltage operations.
  • Semiconductor Testing: This transistor can be used in semiconductor testing applications where high current handling and high power dissipation levels are required.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The BDX63B is designed for high-speed applications, making it suitable for use in modern electronic systems.
  • Low-Voltage Operations: This transistor can operate at low voltage levels, making it ideal for battery-powered or low-voltage applications.

Disadvantages

  • Heat Generation: The BDX63B generates heat during operation, which may require additional cooling measures to prevent overheating.

Equivalents

For similar functionalities, consider these alternatives to the BDX63B:

  • BX60C: This transistor has similar characteristics to the BDX63B and can be used as a substitute in many applications.
  • BX61A: The BX61A is another Darlington BJT that can be used as an alternative to the BDX63B.
  • 2N3906: This transistor has similar characteristics to the BDX63B and can be used as a substitute in many applications.

Frequently Asked Questions

Q: What is the maximum current handling capacity of the BDX63B?
A: The maximum current handling capacity of the BDX63B is 8A.

Q: What is the maximum power dissipation level of the BDX63B?
A: The maximum power dissipation level of the BDX63B is 90,000mW.

Q: Can the BDX63B operate at low voltage levels?
A: Yes, the BDX63B can operate at low voltage levels, making it suitable for use in battery-powered or low-voltage applications.

Q: Is the BDX63B suitable for high-speed applications?
A: Yes, the BDX63B is designed for high-speed applications and can be used in modern electronic systems that require fast switching times.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Obsolete
Automotive No PPAP No
Type NPN Configuration Single
Number of Elements per Chip 1 Maximum Collector-Emitter Voltage (V) 100
Maximum Collector Base Voltage (V) 120 Maximum Emitter Base Voltage (V) 5
Maximum Continuous DC Collector Current (A) 8 Maximum Collector Cut-Off Current (uA) 200
Maximum Collector-Emitter Saturation Voltage (V) 2@12mA@3A Minimum DC Current Gain 1000@3A@3V
Maximum Power Dissipation (mW) 90000 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 200 Mounting Through Hole
Package Height 11.43(Max) Package Width 26.67(Max)
Package Length 39.94(Max) PCB changed 2
Tab Tab Standard Package Name TO
Supplier Package TO-3 Pin Count 3
Lead Shape Through Hole

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packageimg

BDX63B

Trans Darlington NPN 100V 8A 90000mW 3-Pin(2+Tab) TO-3

Inventory:

4,008