BCX5616QTA
BCX5616QTA: High-performance bipolar power transistor
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.112 | $0.56 |
50 | $0.089 | $4.45 |
150 | $0.078 | $11.70 |
1000 | $0.069 | $69.00 |
2000 | $0.063 | $126.00 |
5000 | $0.059 | $295.00 |
Inventory:6,415
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Part Number : BCX5616QTA
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Package/Case : SOT-89-3
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Manufacturer : Diodes Incorporated
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Components Classification : Single Bipolar Transistors
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Datesheet : BCX5616QTA DataSheet (PDF)
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Series : BCX5616
The BCX5616QTA is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a high current and voltage rating, making it suitable for a wide range of electronic circuit designs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BCX5616QTA BJT for a visual representation. Note: For detailed technical specifications, please refer to the BCX5616QTA datasheet. Functionality The BCX5616QTA NPN BJT provides high performance in switching and amplification applications, offering a high current and voltage rating with low saturation voltage and fast switching speed. Usage Guide Q: Is the BCX5616QTA suitable for high-frequency applications? For similar functionalities, consider these alternatives to the BCX5616QTA:Overview of BCX5616QTA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BCX5616QTA features fast switching speed and is suitable for high-frequency applications requiring reliable performance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-89-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 1 W |
Gain Bandwidth Product fT | 150 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Qualification | AEC-Q101 |
Brand | Diodes Incorporated | Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 100 | DC Current Gain hFE Max | 250 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1000 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.001834 oz |
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