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BC847BPDW1T1G

BC847BPDW1T1G Bipolar RF Transistor NPN PNP 45 V 100 MHz 380 mW 100 mA 150 hFE

Inventory:8,478

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Overview of BC847BPDW1T1G

The BC847BPDW1T1G is a general-purpose NPN transistor in a SOT-363 package, designed for amplification and switching applications. This transistor is ideal for use in various electronic circuits where low current and low voltage operation are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BC847BPDW1T1G transistor for a visual representation.

Key Features

  • NPN Silicon Transistor: The BC847BPDW1T1G is an NPN transistor suitable for a wide range of amplification and switching applications.
  • Low Current and Voltage Operation: Designed for low current and low voltage requirements in electronic circuits.
  • SOT-363 Package: Compact SOT-363 package offers space-saving and efficient PCB layout.
  • High Gain: Provides high current gain and amplification capabilities for signal processing.

Note: For detailed technical specifications, please refer to the BC847BPDW1T1G datasheet.

Application

  • Amplification: Suitable for small signal amplification in audio and other electronic circuits.
  • Switching: Can be used for switching applications in digital logic circuits and power management systems.
  • Signal Processing: Ideal for signal processing tasks where moderate gain transistors are required.

Functionality

The BC847BPDW1T1G NPN transistor offers reliable amplification and switching capabilities in various electronic circuits. Its low current and low voltage operation make it a versatile component for small signal applications.

Usage Guide

  • Emitter (E): Connect to the ground or common reference point of the circuit.
  • Base (B): Input terminal for controlling the transistor's conduction based on the applied signal.
  • Collector (C): Output terminal where the amplified or switched signal is obtained.

Equivalent

For similar functionalities, consider these alternatives to the BC847BPDW1T1G:

  • 2N3904: A popular NPN transistor with similar characteristics and widely used in amplification and switching circuits.
  • BC548: Another general-purpose NPN transistor commonly employed in electronic circuits for amplification and switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity Complementary
Type General Purpose VCE(sat) Max (V) 0.6
IC Cont. (A) 0.1 VCEO Min (V) 45
VCBO (V) 50 VEBO (V) 6
VBE(sat) (V) 0.7 VBE(on) (V) 0.66
hFE Min 200 hFE Max 475
fT Min (MHz) 100 PTM Max (W) 0.38
Pricing ($/Unit) $0.0219Sample

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BC847BPDW1T1G

BC847BPDW1T1G Bipolar RF Transistor NPN PNP 45 V 100 MHz 380 mW 100 mA 150 hFE

Inventory:

8,478