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BC449A

Compact TO- package suitable for through-hole mounting, with a high power dissipation rating of W a

Inventory:3,669

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Overview of BC449A

The BC449A is a general-purpose PNP transistor commonly used in amplification and switching applications. This transistor is designed for low to medium power amplification and can also be used in signal processing circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Key Features

  • PNP Transistor: The BC449A is a PNP transistor suitable for low to medium power applications.
  • General Purpose: This transistor can be used in various amplification and switching circuits.
  • Reliable Performance: The BC449A offers reliable performance in signal processing and amplification tasks.

Note: For detailed technical specifications, please refer to the BC449A datasheet.

Application

  • Amplification: Ideal for low to medium power amplification tasks in audio and signal processing circuits.
  • Switching: Can be used for switching applications in electronic circuits.
  • Signal Processing: Suitable for signal processing tasks due to its PNP transistor characteristics.

Functionality

The BC449A PNP transistor is a versatile component that can amplify signals and perform switching functions in electronic circuits with reliable performance.

Equivalent

For similar functionalities, consider these alternatives to the BC449A:

  • 2N3906: A PNP transistor with similar characteristics suitable for amplification and switching.
  • BC557: Another general-purpose PNP transistor commonly used in amplification and signal processing circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-92-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 100 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 125 mV
Maximum DC Collector Current 300 mA Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 200 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand onsemi
Continuous Collector Current 300 mA DC Collector/Base Gain hfe Min 120
Height 7.87 mm Length 5.21 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 5000
Subcategory Transistors Technology Si
Width 4.19 mm

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BC449A

Compact TO- package suitable for through-hole mounting, with a high power dissipation rating of W a

Inventory:

3,669