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ATF-55143-TR1G

Voltage-controlled RF transistor

Inventory:8,517

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Overview of ATF-55143-TR1G

The ATF-55143-TR1G is a low noise enhancement-mode pHEMT housed in a surface-mount SOT-343 package.This transistor is designed for use in various RF applications requiring high gain,low noise figure,and excellent linearity.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Input terminal for the transistor
  • Drain: Output terminal for the transistor
  • Source: Common terminal

Circuit Diagram

Include a circuit diagram illustrating the use of ATF-55143-TR1G in an RF application for better understanding.

Key Features

  • High Gain: The ATF-55143-TR1G offers high gain, making it suitable for RF amplification applications.
  • Low Noise Figure: This transistor has a low noise figure, ensuring minimal signal degradation in high-frequency circuits.
  • Enhancement-Mode pHEMT: Features an enhancement-mode design for improved performance and ease of use in amplifier designs.
  • Wide Frequency Range: Operates effectively across a broad frequency range, making it versatile for various RF applications.

Note: For detailed technical specifications, please refer to the ATF-55143-TR1G datasheet.

Application

  • RF Amplification: Ideal for use in RF amplifiers to boost signal strength while maintaining low noise levels.
  • Wireless Communication Systems: Suitable for integration into wireless communication systems requiring high-performance RF components.
  • Radar Systems: Used in radar systems for signal amplification and noise reduction.

Functionality

The ATF-55143-TR1G is a high-gain, low noise figure transistor designed for RF applications, providing excellent amplification capabilities with minimal signal distortion.

Usage Guide

  • Gate Connection: Connect the input signal to the Gate terminal.
  • Drain Connection: Route the output signal from the Drain terminal.
  • Biasing: Proper biasing of the transistor is essential for optimal performance; refer to the datasheet for detailed biasing information.

Frequently Asked Questions

Q: What is the typical gain of the ATF-55143-TR1G?
A: The ATF-55143-TR1G offers a typical gain of X dB, depending on the operating conditions and frequency.

Q: Can the ATF-55143-TR1G be used in high-frequency applications?
A: Yes, the ATF-55143-TR1G is designed to operate effectively in high-frequency RF circuits, making it suitable for such applications.

Equivalent

For similar functionalities, consider these alternatives to the ATF-55143-TR1G:

  • ATF-54143-TR1G: A comparable low noise enhancement-mode pHEMT transistor with similar performance characteristics.
  • ATF-36163-TR1G: This RF transistor offers high gain and low noise figure for amplification tasks in similar applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type EpHEMT Technology GaAs
Operating Frequency 2 GHz Gain 17.7 dB
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 5 V
Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V Id - Continuous Drain Current 100 mA
Maximum Operating Temperature + 150 C Pd - Power Dissipation 270 mW
Mounting Style SMD/SMT Package / Case SOT-343
Brand Broadcom / Avago Configuration Single Dual Source
Forward Transconductance - Min 220 mmho NF - Noise Figure 0.6 dB
P1dB - Compression Point 14.4 dBm Product RF JFET
Product Type RF JFET Transistors Factory Pack Quantity 3000
Subcategory Transistors Type GaAs EpHEMT

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ATF-55143-TR1G

Voltage-controlled RF transistor

Inventory:

8,517