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ATF-38143-TR1G

ATF-38143-TR1G: GaAs Transistor for Low Noise RF Applications"

Inventory:6,277

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Overview of ATF-38143-TR1G

The ATF-38143-TR1G is a low-noise Pseudomorphic High Electron Mobility Transistor (pHEMT) MMIC in a standard SOT-343 package. This transistor is designed for use in various high-frequency applications where low noise and high gain are essential.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D1: Drain 1
  • S: Source
  • D2: Drain 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ATF-38143-TR1G for a better understanding of its application.

Key Features

  • Pseudomorphic High Electron Mobility Transistor: The ATF-38143-TR1G features a pHEMT design for low-noise and high-gain performance.
  • High Frequency Operation: This transistor is suitable for high-frequency applications up to X-band frequencies.
  • Low Noise Figure: With a low noise figure, the ATF-38143-TR1G is ideal for sensitive receiver systems.
  • Standard SOT-343 Package: The transistor comes in a standard SOT-343 package for easy integration into circuit designs.
  • Bias Tee Compatible: The ATF-38143-TR1G can be used with a bias tee for various RF applications.

Note: For detailed technical specifications, please refer to the ATF-38143-TR1G datasheet.

Application

  • RF Amplification: Ideal for RF amplification in receivers, transceivers, and RF front-end modules.
  • Radar Systems: Suitable for radar systems operating in the X-band frequency range.
  • Satellite Communication: Used in satellite communication systems for low-noise signal amplification.

Functionality

The ATF-38143-TR1G is a high-performance pHEMT transistor designed for low-noise RF amplification in high-frequency applications. It offers high gain and low noise figure, making it suitable for sensitive receiver systems.

Usage Guide

  • Power Supply: Ensure proper biasing of the gate and drain terminals based on the datasheet specifications.
  • RF Connections: Connect the RF input to the gate terminal and output to the drain terminal for amplification.
  • Bias Tee Setup: Use a bias tee if necessary for supplying DC bias to the transistor.

Frequently Asked Questions

Q: What is the operating frequency range of the ATF-38143-TR1G?
A: The ATF-38143-TR1G is designed for high-frequency applications up to X-band frequencies.

Q: Is the ATF-38143-TR1G suitable for low-noise amplifier designs?
A: Yes, the ATF-38143-TR1G features a low noise figure, making it ideal for low-noise amplifier designs in RF systems.

Equivalent

For similar functionalities, consider these alternatives to the ATF-38143-TR1G:

  • AFT-35143-TR1G: Another low-noise pHEMT transistor designed for high-frequency applications.
  • ATF-36143-TR1G: This transistor offers similar performance characteristics in a different package for design flexibility.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type pHEMT Technology GaAs
Operating Frequency 2 GHz Gain 16 dB
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 4.5 V
Vgs - Gate-Source Breakdown Voltage - 4 V Id - Continuous Drain Current 145 mA
Maximum Operating Temperature + 160 C Pd - Power Dissipation 580 mW
Mounting Style SMD/SMT Package / Case SOT-343
Brand Broadcom / Avago Configuration Single Dual Source
Forward Transconductance - Min 230 mmho NF - Noise Figure 0.4 dB
P1dB - Compression Point 12 dBm Product RF JFET
Product Type RF JFET Transistors Factory Pack Quantity 3000
Subcategory Transistors Type GaAs pHEMT

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ATF-38143-TR1G

ATF-38143-TR1G: GaAs Transistor for Low Noise RF Applications"

Inventory:

6,277