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AT-41533-TR1G

41533-TR1G RF Transistor Bipolar Si

Inventory:9,159

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Overview of AT-41533-TR1G

The AT-41533-TR1G is a low noise silicon bipolar RF transistor designed for high-performance RF amplifier applications. This transistor offers high gain, low noise figure, and excellent linearity, making it suitable for a wide range of RF circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): RF input/output terminal
  • Base (B): Control terminal for biasing
  • Emitter (E): Ground terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AT-41533-TR1G transistor for a visual representation.

Key Features

  • High Gain: The AT-41533-TR1G offers high gain characteristics, enhancing signal amplification in RF circuits.
  • Low Noise Figure: With a low noise figure, this transistor minimizes noise contribution in RF systems, improving signal clarity.
  • Excellent Linearity: The transistor exhibits excellent linearity, making it suitable for applications requiring linear amplification.
  • Broadband Performance: Designed for RF frequencies, the AT-41533-TR1G provides broadband performance for versatile applications.
  • High Stability: This transistor offers high stability over temperature and operating conditions, ensuring reliable performance.

Note: For detailed technical specifications, please refer to the AT-41533-TR1G datasheet.

Application

  • RF Amplifiers: Ideal for use in RF amplifiers to boost signal strength with minimal noise.
  • Wireless Communication Systems: Suitable for wireless communication systems requiring high gain and low noise operation.
  • Radar Systems: Used in radar systems for signal amplification and processing.

Functionality

The AT-41533-TR1G is a high-performance RF transistor designed to amplify RF signals with high gain and low noise. It serves as a key component in RF circuits for various applications.

Usage Guide

  • Biasing: Apply the appropriate biasing voltage to the base (B) terminal for optimal performance.
  • RF Connections: Connect the RF input/output signals to the collector (C) terminal for signal amplification.
  • Grounding: Ensure proper grounding by connecting the emitter (E) terminal to system ground.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the AT-41533-TR1G?
A: The AT-41533-TR1G is designed to operate effectively within the RF frequency range of 1MHz to 2GHz.

Q: Is the AT-41533-TR1G suitable for ultra-low power RF applications?
A: While the AT-41533-TR1G offers high performance, it is optimized for applications requiring standard RF power levels and may not be ideal for ultra-low power operations.

Equivalent

For similar functionalities, consider these alternatives to the AT-41533-TR1G:

  • BFU520XN: A high-frequency RF transistor suitable for broadband applications with similar gain and noise performance.
  • MRF947T1: This RF transistor offers high linearity and gain for RF amplifier applications requiring robust performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Bipolar Transistors RoHS Details
Transistor Type Bipolar Technology Si
Transistor Polarity NPN Operating Frequency 10000 MHz
DC Collector/Base Gain hfe Min 30 Collector- Emitter Voltage VCEO Max 12 V
Emitter- Base Voltage VEBO 1.5 V Continuous Collector Current 50 mA
Configuration Single Mounting Style SMD/SMT
Package / Case SOT-23 Brand Broadcom / Avago
Collector- Base Voltage VCBO 20 V DC Current Gain hFE Max 270
Gain Bandwidth Product fT 10000 MHz Height 1.2 mm
Length 3.13 mm Maximum DC Collector Current 50 mA
Pd - Power Dissipation 225 mW Product Type RF Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Type RF Bipolar Small Signal Width 1.5 mm
Unit Weight 0.000282 oz

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AT-41533-TR1G

41533-TR1G RF Transistor Bipolar Si

Inventory:

9,159