• AT-41511-TR1G SOT-143
AT-41511-TR1G SOT-143

AT-41511-TR1G

41511-TR1G Transistor Si

Inventory:6,557

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Overview of AT-41511-TR1G

The AT-41511-TR1G is a high-electron-mobility transistor (HEMT) designed for high-frequency applications. This transistor offers low noise figure and high linearity, making it suitable for use in RF amplifiers and other high-frequency circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Input terminal for controlling the transistor
  • Drain: Output terminal for the transistor
  • Source: Common terminal for the transistor
  • RF In: RF signal input
  • RF Out: RF signal output
  • Bias: Bias voltage input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AT-41511-TR1G for a better understanding of its application.

Key Features

  • High Electron Mobility Transistor: The AT-41511-TR1G is a HEMT designed for high-frequency performance.
  • Low Noise Figure: Provides low noise figure characteristics, ideal for sensitive RF applications.
  • High Linearity: Offers high linearity to prevent signal distortion in amplification.
  • Broadband Operation: Suitable for broadband RF amplification and signal processing.
  • Small Package: Comes in a compact package ideal for space-constrained designs.

Note: For detailed technical specifications, please refer to the AT-41511-TR1G datasheet.

Application

  • RF Amplification: Ideal for use in RF amplifiers for high-frequency signal processing.
  • Wireless Communication Systems: Suitable for integration into wireless communication systems.
  • Radar Systems: Used in radar systems for high-frequency signal processing and amplification.

Functionality

The AT-41511-TR1G is a high-performance HEMT that provides excellent amplification and signal processing capabilities in high-frequency applications, ensuring reliable and efficient operation.

Usage Guide

  • Bias Voltage: Provide the appropriate bias voltage to the Bias pin for proper transistor operation.
  • RF Connections: Connect the RF In and RF Out pins as required for signal amplification.
  • Control: Use the Gate pin to control the transistor operation based on input signals.

Frequently Asked Questions

Q: What are the typical applications of the AT-41511-TR1G?
A: The AT-41511-TR1G is commonly used in RF amplifiers, wireless communication systems, and radar applications requiring high-frequency performance.

Q: Does the AT-41511-TR1G require special heat dissipation measures?
A: While the AT-41511-TR1G is designed for high-frequency operation, proper thermal management may be necessary for extended usage durations and higher power applications.

Equivalent

For similar functionalities, consider these alternatives to the AT-41511-TR1G:

  • MGA-81563-TR1G: Another high-performance HEMT with similar characteristics for high-frequency applications.
  • AVAGO ATF-54143: A high-linearity HEMT suitable for RF amplification and signal processing applications.

AT-41511-TR1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Bipolar Transistors RoHS Details
Transistor Type Bipolar Technology Si
Transistor Polarity NPN Operating Frequency 10 GHz
DC Collector/Base Gain hfe Min 30 Collector- Emitter Voltage VCEO Max 12 V
Emitter- Base Voltage VEBO 1.5 V Continuous Collector Current 50 mA
Configuration Single Mounting Style SMD/SMT
Package / Case SOT-143 Brand Broadcom / Avago
Collector- Base Voltage VCBO 20 V DC Current Gain hFE Max 270
Gain Bandwidth Product fT 10000 MHz Height 1.1 mm
Length 3.06 mm Maximum DC Collector Current 50 mA
Pd - Power Dissipation 225 mW Product Type RF Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Type RF Bipolar Small Signal Width 1.4 mm

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AT-41511-TR1G

41511-TR1G Transistor Si

Inventory:

6,557