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AS6C8016-55ZIN

AS6C8016-55ZIN: Standard 512Kx16 SRAM, 55ns, CMOS, PDSO44, 0.400 Inch, Green, TSOP2-44

Quantity Unit Price(USD) Ext. Price
1 $8.912 $8.91
10 $8.701 $87.01
30 $8.561 $256.83
100 $8.420 $842.00

Inventory:6,228

*The price is for reference only.
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Overview of AS6C8016-55ZIN

The AS6C8016-55ZIN is a 2M bit low power CMOS SRAM IC with a 55ns access time. It offers non-volatility and low power consumption, making it suitable for various memory storage applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A18: Address Inputs
  • DQ0-DQ15: Data Input/Output Lines
  • CE: Chip Enable
  • OE: Output Enable
  • WE: Write Enable
  • VCC: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS6C8016-55ZIN IC for a visual representation.

Key Features

  • 2M Bit CMOS SRAM: Provides 2 megabits of storage capacity for data retention.
  • 55ns Access Time: Offers fast access speeds for efficient data retrieval and storage.
  • Low Power Consumption: Consumes minimal power during operation, ideal for battery-powered devices.
  • Non-Volatile Memory: Retains stored data even when power is turned off, ensuring data integrity.

Note: For detailed technical specifications, please refer to the AS6C8016-55ZIN datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring non-volatile memory storage.
  • Data Logging: Suitable for applications involving data logging and storage with low power requirements.
  • Battery-Powered Devices: Perfect for integration into devices powered by batteries that need non-volatile memory.

Functionality

The AS6C8016-55ZIN is designed to store and retrieve data in a reliable and efficient manner. It is a versatile low power CMOS SRAM solution for various memory storage applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 28) to the positive power supply and GND (Pin 14) to ground.
  • Data Connections: Use DQ0-DQ15 for data input and output operations.
  • Control Inputs: Utilize CE, OE, and WE pins for chip enable, output enable, and write enable functions respectively.

Frequently Asked Questions

Q: Is the AS6C8016-55ZIN suitable for high-speed data processing applications?
A: The AS6C8016-55ZIN offers a 55ns access time, which makes it suitable for applications requiring moderate-speed data processing.

Q: Can the AS6C8016-55ZIN retain data without power supply?
A: Yes, the AS6C8016-55ZIN is a non-volatile memory device, allowing it to retain stored data even without power.

Equivalent

For similar functionalities, consider these alternatives to the AS6C8016-55ZIN:

  • AT45DB161E-SHF-B:A serial flash memory IC offering non-volatile storage with fast access times and low power consumption.
  • IS61LV25616AL:This is a low power CMOS SRAM IC with 256K words x 16 bits configuration suitable for battery-powered applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 8 Mbit Organization 512 k x 16
Access Time 55 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 2.7 V
Supply Current - Max 60 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case TSOP II-44 Brand Alliance Memory
Memory Type SDR Moisture Sensitive Yes
Product Type SRAM Series AS6C8016
Factory Pack Quantity 135 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.077179 oz

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