AS6C1616-55TIN

The AS6C1616-55TIN is a 1M bit low power CMOS static random access memory (SRAM) IC with a high-speed 55ns access time. This IC offers non-volatility and operates with a single power supply, making it suitable for various memory storage applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A0-A18: Address inputs
• Q1-Q16: Data outputs
• CE: Chip enable
• OE: Output enable
• WE: Write enable
• VCC: Positive power supply
• GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS6C1616-55TIN SRAM for a visual representation.

Key Features

• 1M Bit Capacity: The AS6C1616-55TIN offers a 1M bit storage capacity, sufficient for storing a large amount of data.
• High-Speed Access Time: With a 55ns access time, this SRAM provides quick data retrieval and storage.
• Low Power Consumption: Ideal for battery-powered devices, this IC consumes low power, extending battery life.
• Non-Volatile Memory: The AS6C1616-55TIN retains stored data even when power is removed, ensuring data integrity.
• Single Power Supply: Operating from a single power supply simplifies system design and integration.

Note: For detailed technical specifications, please refer to the AS6C1616-55TIN datasheet.

Application

• Embedded Systems: Suitable for use in embedded systems that require non-volatile memory storage.
• Communication Devices: Ideal for buffering data in communication devices to ensure data reliability.
• Industrial Automation: Used in industrial automation systems for data caching and processing.

Functionality

The AS6C1616-55TIN is a low power CMOS SRAM IC with high-speed access, providing reliable non-volatile memory storage for various applications.

Usage Guide

• Power Supply: Connect VCC (Pin 6) to the positive power supply and GND (Pin 7) to ground.
• Data Interface: Use the address inputs (A0-A18) for memory addressing and the control inputs (CE, OE, WE) for data operations.
• Data Output: Retrieve stored data from the data output pins (Q1-Q16) as required.

Frequently Asked Questions

Q: Can the AS6C1616-55TIN operate at a lower access time?
A: The AS6C1616-55TIN is designed with a 55ns access time. For faster access requirements, consider using SRAMs with lower access times.

Q: Is the AS6C1616-55TIN suitable for automotive applications?
A: Yes, the AS6C1616-55TIN's low power consumption and non-volatility make it suitable for automotive applications requiring reliable memory storage.