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AS6C1008-55SIN

Supports wide voltage range

Inventory:5,295

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Overview of AS6C1008-55SIN

The AS6C1008-55SIN is a 128K x 8-bit low power CMOS static RAM (SRAM) with a 55ns access time. This memory IC is designed for use in various electronic applications requiring fast and reliable data storage.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0 to A16: Address Inputs
  • Q1 to Q8: Data Outputs
  • CE: Chip Enable
  • OE: Output Enable
  • WE: Write Enable
  • VCC: Positive Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS6C1008-55SIN SRAM for a visual representation.

Key Features

  • 128K x 8-Bit SRAM: Provides 128 kilobits of storage organized in an 8-bit configuration, suitable for data storage applications.
  • Low Power Consumption: Features low power CMOS technology, making it energy-efficient for battery-operated devices.
  • Fast Access Time: With a 55ns access time, the AS6C1008-55SIN offers quick data access for high-performance systems.
  • Easy Interface: The memory IC can be easily interfaced with microcontrollers and other digital devices for seamless data storage.
  • Wide Operating Voltage Range: Operates within a broad voltage range, making it compatible with a variety of electronic systems.

Note: For detailed technical specifications, please refer to the AS6C1008-55SIN datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring fast and reliable data storage.
  • Consumer Electronics: Suitable for various consumer electronic devices like digital cameras, printers, and smart appliances.
  • Industrial Control: Used in industrial control systems for data buffering and temporary storage.

Functionality

The AS6C1008-55SIN is a low power CMOS SRAM chip that provides efficient data storage capabilities for electronic applications. Its fast access time and low power consumption make it a reliable choice for memory storage needs.

Usage Guide

  • Power Supply: Connect VCC (Pin 28) to the positive power supply and GND (Pin 14) to ground.
  • Data Interface: Use the address inputs (A0-A16) for selecting memory locations and the data outputs (Q1-Q8) for retrieving stored data.
  • Control Signals: Control the memory operation using the Chip Enable (CE), Output Enable (OE), and Write Enable (WE) pins.

Frequently Asked Questions

Q: What is the maximum operating frequency for the AS6C1008-55SIN?
A: The AS6C1008-55SIN is designed to operate effectively within its specified 55ns access time, corresponding to a maximum frequency determined by this access time.

Q: Is the AS6C1008-55SIN compatible with 5V systems?
A: Yes, the AS6C1008-55SIN can be used with 5V systems as it operates within a wide voltage range.

Equivalent

For similar functionalities, consider these alternatives to the AS6C1008-55SIN:

  • IS61C1024: A 1Mbit low power CMOS SRAM with similar performance characteristics to the AS6C1008-55SIN.
  • HM62256: This is a 32K x 8-bit SRAM IC with comparable features to the AS6C1008-55SIN, suitable for smaller memory requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 1 Mbit Organization 128 k x 8
Access Time 55 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 2.7 V
Supply Current - Max 60 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case SOP-32 Brand Alliance Memory
Memory Type SDR Moisture Sensitive Yes
Product Type SRAM Series AS6C1008
Factory Pack Quantity 72 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.058202 oz

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packageimg

AS6C1008-55SIN

Supports wide voltage range

Inventory:

5,295