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AS4C4M32SA-6TIN

Synchronous Dynamic Random Access Memory Chip with 3.3V Voltage Rating

Inventory:7,362

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Overview of AS4C4M32SA-6TIN

The AS4C4M32SA-6TIN is a 4M x 32 Synchronous DRAM optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The AS4C4M32SA-6TIN pinout refers to the configuration and function of each pin in its TFSOP-86-10.2mm package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the AS4C4M32SA-6TIN has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • 4M x 32 Synchronous DRAM: The AS4C4M32SA-6TIN is a high-performance memory device that offers fast data transfer rates and low power consumption.
  • 6ns Access Time: This feature enables the device to quickly access stored data, making it suitable for applications requiring rapid data processing.
  • Fast Page Mode Operation: The AS4C4M32SA-6TIN supports fast page mode operation, which allows for efficient data transfer and reduced power consumption.
  • Low Power Consumption: This feature makes the device suitable for battery-powered devices or applications where power efficiency is crucial.
  • Industrial Temperature Range (-40°C to 85°C): The AS4C4M32SA-6TIN operates within a wide temperature range, making it suitable for use in various industrial and commercial applications.
  • 32ms Refrest Interval: This feature enables the device to refresh its stored data at regular intervals, ensuring data integrity and reliability.
  • Double Data Rate (DDR) Interface: The AS4C4M32SA-6TIN features a DDR interface that allows for faster data transfer rates compared to traditional single-data-rate interfaces.
  • 54-pin TSOP II Package: The device is packaged in a 54-pin TSOP II package, which provides a compact and reliable means of integrating the component into a circuit.

Applications

  • Smart home devices: The AS4C4M32SA-6TIN is suitable for use in smart home devices that require high-performance memory and low power consumption.
  • Wearable technology: This device can be used in wearable technology such as smartwatches, fitness trackers, or other wearables that require fast data transfer rates and low power consumption.
  • Industrial control systems: The AS4C4M32SA-6TIN is suitable for use in industrial control systems that require high-performance memory and reliable operation within a wide temperature range.

Advantages and Disadvantages

Advantages:

  • Fast data transfer rates
  • Low power consumption
  • Wide operating temperature range
  • Compact packaging

Disadvantages:

  • Higher cost compared to other memory devices
  • May require additional circuitry for power management

Equivalents

For similar functionalities, consider these alternatives to the AS4C4M32SA-6TIN:

  • AS4C16M8SA-5TIN: This device offers a smaller capacity but similar features and performance.
  • AS4C64M16SA-3TIN: This device provides higher capacity but may have different pinout configurations.

Frequently Asked Questions

Q: What is the operating temperature range of the AS4C4M32SA-6TIN?
A: The AS4C4M32SA-6TIN operates within a wide temperature range of -40°C to 85°C.

Q: How does the AS4C4M32SA-6TIN support fast page mode operation?
A: The device supports fast page mode operation through its ability to quickly access stored data and reduce power consumption during data transfer.

Q: What is the DDR interface on the AS4C4M32SA-6TIN used for?
A: The DDR interface enables faster data transfer rates compared to traditional single-data-rate interfaces, making it suitable for applications that require rapid data processing.

Q: Can the AS4C4M32SA-6TIN be used in wearable technology?
A: Yes, the AS4C4M32SA-6TIN is suitable for use in wearable technology such as smartwatches, fitness trackers, or other wearables that require fast data transfer rates and low power consumption.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Programmabe Not Verified
Memory Type Volatile Memory Format DRAM
Technology SDRAM Memory Size 128 Mbit
Memory Organization 4M x 32 Memory Interface Parallel
Clock Frequency 166 MHz Write Cycle Time - Word, Page 2ns
Access Time 5.4 ns Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package 86-TSOP II
Base Product Number AS4C4M32 Manufacturer Alliance Memory
Product Category DRAM RoHS Details
Type SDRAM Mounting Style SMD/SMT
Data Bus Width 32 bit Organization 4 M x 32
Maximum Clock Frequency 166 MHz Supply Voltage - Max 3.6 V
Supply Voltage - Min 3 V Supply Current - Max 160 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Brand Alliance Memory Moisture Sensitive Yes
Product Type DRAM Factory Pack Quantity 108
Subcategory Memory & Data Storage Unit Weight 0.182857 oz

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Warranty, Returns, and Additional Information

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AS4C4M32SA-6TIN

Synchronous Dynamic Random Access Memory Chip with 3.3V Voltage Rating

Inventory:

7,362