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AS4C32M16SB-6TIN

Operating at 166 MHz

Inventory:6,315

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Overview of AS4C32M16SB-6TIN

The AS4C32M16SB-6TIN is a 512Mb CMOS Synchronous DRAM organized as 32M words by 16 bits. It operates on a high-speed clock and is designed for high-performance computing and multimedia systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • DQ0-DQ15: Data Input/Output
  • A0-A12: Address Inputs
  • BA0-BA1: Bank Address Inputs
  • CS: Chip Select
  • CKE: Clock Enable
  • CK, CK#: Clock Inputs
  • DQM0-DQM1: Data Mask
  • WE: Write Enable
  • RAS: Row Address Strobe
  • CAS: Column Address Strobe
  • DM: Data Mask for x16 Data Width
  • VDD, VDDQ: Power Supplies
  • VSS, VSSQ: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS4C32M16SB-6TIN for a visual representation.

Key Features

  • High-Speed Operation: Capable of operating at high-speed clock frequencies, making it suitable for high-performance computing.
  • Large Memory Capacity: With a capacity of 512Mb, it provides ample memory for multimedia and graphics-intensive applications.
  • Synchronous Interface: Utilizes a synchronous interface for efficient data transfer and system performance.
  • Low Power Consumption: Incorporates power-saving features for optimal energy efficiency in computing systems.
  • Wide Temperature Range: Operates reliably across a wide temperature range, suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the AS4C32M16SB-6TIN datasheet.

Application

  • Computer Systems: Ideal for use in computer systems, servers, and workstations requiring high-speed and large capacity memory.
  • Multimedia and Graphics: Suitable for multimedia applications, graphic design, and video processing that demand high data throughput.
  • Networking Equipment: Used in networking devices and communication systems for efficient data handling and processing.

Functionality

The AS4C32M16SB-6TIN is a high-speed CMOS Synchronous DRAM designed to provide efficient and reliable memory for a range of computing and multimedia applications.

Usage Guide

  • Power Supply: Connect VDD and VDDQ to the respective power supplies. Connect VSS and VSSQ to the ground.
  • Control Signals: Properly interface the chip select, clock, address, data input/output, and control signals based on the system requirements.
  • Clock Enable: Use the CKE signal to enable or disable the clock to the device.

Frequently Asked Questions

Q: What is the maximum clock frequency supported by AS4C32M16SB-6TIN?
A: The AS4C32M16SB-6TIN is designed to support high-speed clock frequencies, typically in the range of several hundred MHz.

Q: Is AS4C32M16SB-6TIN suitable for battery-powered devices?
A: While it operates with low power consumption, AS4C32M16SB-6TIN may not be optimal for battery-powered applications due to its high-speed and performance-oriented design.

Equivalent

For similar functionalities, consider these alternatives to the AS4C32M16SB-6TIN:

  • MT47H64M16HR-25E:Hynix Semiconductor's Synchronous DRAM with comparable specifications and performance characteristics to the AS4C32M16SB-6TIN.
  • IS42S16320D-7TL:Integrated Silicon Solution Inc.'s Synchronous DRAM offering similar capacity and high-speed operation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type SDRAM Mounting Style SMD/SMT
Data Bus Width 16 bit Organization 32 M x 16
Memory Size 512 Mbit Maximum Clock Frequency 166 MHz
Access Time 5 ns Supply Voltage - Max 3.6 V
Supply Voltage - Min 3 V Supply Current - Max 120 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Series AS4C32M16SB Brand Alliance Memory
Moisture Sensitive Yes Product Type DRAM
Factory Pack Quantity 108 Subcategory Memory & Data Storage
Unit Weight 0.434381 oz

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