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AS4C256M16D3LC-12BIN

DDR3 DRAM module

Inventory:7,484

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Overview of AS4C256M16D3LC-12BIN

The AS4C256M16D3LC-12BIN is a 256Mbit DDR3 SDRAM organized as 16M words of 16 bits each. This high-speed, CMOS dynamic random-access memory module is designed to provide high performance and reliability in various memory-intensive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • VSS: Ground
  • DQ0-DQ15: Data input/output pins
  • DM0-DM1: Data mask signals
  • BA0-BA2: Bank address inputs
  • A0-A12: Address inputs
  • RAS, CAS: Row address strobe, column address strobe
  • WE: Write enable
  • CKE: Clock enable
  • CS: Chip select
  • CK,CK#: Clock inputs
  • DQS, DQS#: Data strobe signals
  • ODT: On-die termination control
  • RESET: Reset input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS4C256M16D3LC-12BIN for a visual representation.

Key Features

  • High Speed: Supports a clock frequency of 800MHz (DDR3-1600) for rapid data transfer.
  • Low Power Consumption: Operates at low power, making it suitable for energy-efficient systems.
  • Wide Operating Voltage Range: Compatible with a voltage range of 1.425V to 1.575V.
  • Industrial Temperature Range: Designed to operate in industrial temperature conditions (-40°C to 95°C).
  • On-Die Termination: Features on-die termination for improved signal integrity and reduced system cost.

Note: For detailed technical specifications, please refer to the AS4C256M16D3LC-12BIN datasheet.

Application

  • Computer Systems: Ideal for use in computer systems, laptops, and servers requiring high-speed memory access.
  • Embedded Systems: Suitable for various embedded applications, such as industrial automation and telecommunications equipment.Networking Devices: Used in networking equipment and switches for efficient data processing and buffering.

Functionality

The AS4C256M16D3LC-12BIN is a high-speed, low-power DDR3 SDRAM module designed to provide reliable and efficient memory access for a wide range of applications.

Usage Guide

  • Power Supply: Connect the VDD and VSS pins to the power supply voltage and ground, respectively.
  • Data Connections: Use the DQ0-DQ15 pins for data input/output.
  • Memory Control: Apply appropriate signals to the RAS, CAS, WE, and other control pins for memory operations.

Frequently Asked Questions

Q: What is the maximum clock frequency supported by AS4C256M16D3LC-12BIN?
A: The AS4C256M16D3LC-12BIN supports a clock frequency of 800MHz (DDR3-1600) for high-speed data transfer.

Q: Can the AS4C256M16D3LC-12BIN operate in industrial temperature conditions?
A: Yes, this SDRAM module is designed to operate in industrial temperature range (-40°C to 95°C), making it suitable for industrial applications.

Equivalent

For similar functionalities, consider these alternatives to the AS4C256M16D3LC-12BIN:

  • MT47H64M16HR-25E: This is a 256Mbit DDR3 SDRAM module from Micron with similar performance and features.
  • NT5CC128M16IP-DI: Nanya's 256Mbit DDR3 SDRAM offering high-speed and low-power operation similar to AS4C256M16D3LC-12BIN.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Programmabe Not Verified
Memory Type Volatile Memory Format DRAM
Technology SDRAM - DDR3L Memory Size 4 Gbit
Memory Organization 256M x 16 Memory Interface Parallel
Clock Frequency 800 MHz Write Cycle Time - Word, Page 15ns
Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 95°C (TC) Mounting Type Surface Mount
Package / Case FBGA-96 Supplier Device Package 96-FBGA (7.5x13.5)
Base Product Number AS4C256 Manufacturer Alliance Memory
Product Category DRAM RoHS Details
Type SDRAM - DDR3L Mounting Style SMD/SMT
Data Bus Width 16 bit Organization 256 M x 16
Maximum Clock Frequency 800 MHz Supply Voltage - Max 1.45 V
Supply Voltage - Min 1.283 V Supply Current - Max 81 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 95 C
Brand Alliance Memory Moisture Sensitive Yes
Product Type DRAM Factory Pack Quantity 209
Subcategory Memory & Data Storage

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