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AS4C256M16D3A-12BCN

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Overview of AS4C256M16D3A-12BCN

The AS4C256M16D3A-12BCN is a 256Mbit DDR3 SDRAM memory module designed for high-performance computing applications. It features a data rate of 1200 Mbps and operates at a voltage of 1.5V. This memory module offers fast data transfer speeds and reliable performance, making it ideal for demanding computing tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • VSS: Ground
  • DQ: Data input/output pins
  • CLK: Clock input
  • CS: Chip select
  • WE: Write enable
  • RAS: Row address strobe
  • CAS: Column address strobe

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AS4C256M16D3A-12BCN memory module for a visual representation.

Key Features

  • High Capacity: With a capacity of 256Mbits, this DDR3 SDRAM module provides ample storage for data-intensive applications.
  • Fast Data Rate: The AS4C256M16D3A-12BCN offers a high data rate of 1200 Mbps, ensuring quick access to stored information.
  • Low Voltage Operation: Operating at 1.5V, this memory module consumes low power while maintaining efficient performance.
  • Wide Compatibility: Compatible with a range of computing devices and systems, making it versatile for various applications.
  • Reliable Performance: The AS4C256M16D3A-12BCN delivers reliable performance for high-bandwidth tasks and multitasking operations.

Note: For detailed technical specifications, please refer to the AS4C256M16D3A-12BCN datasheet.

Application

  • High-Performance Computing: Suitable for use in high-performance computing systems, servers, and workstations.
  • Graphics Processing: Ideal for graphics-intensive applications, gaming, and multimedia tasks that require fast data access.
  • Networking Equipment: Used in networking devices and routers to handle data processing and routing efficiently.

Functionality

The AS4C256M16D3A-12BCN DDR3 SDRAM memory module provides high-speed data transfer and reliable storage capabilities for demanding computing tasks. It ensures seamless operation in complex computing environments.

Usage Guide

  • Power Supply: Connect VDD (Pin X) to the power supply voltage (1.5V) and VSS (Pin Y) to the ground.
  • Data Transfer: Use the DQ pins for input and output of data between the memory module and the processor.
  • Control Signals: Utilize the CLK, CS, WE, RAS, and CAS pins for controlling data transfer and memory operations.

Frequently Asked Questions

Q: What is the data rate of the AS4C256M16D3A-12BCN memory module?
A: The AS4C256M16D3A-12BCN operates at a data rate of 1200 Mbps, providing fast data transfer speeds.

Q: Is the AS4C256M16D3A-12BCN compatible with 1.8V systems?
A: No, the AS4C256M16D3A-12BCN operates at a voltage of 1.5V and may not be compatible with 1.8V systems. Ensure compatibility with the system requirements before use.

Equivalent

For similar functionalities, consider these alternatives to the AS4C256M16D3A-12BCN:

  • Micron MT41K256M16HA-125:E: A 256Mbit DDR3 SDRAM module with comparable performance characteristics and reliability.
  • Samsung K4B2G0846D: A DDR3 SDRAM memory module from Samsung offering similar data rates and capacity for high-speed computing.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tray Product Status Obsolete
Programmabe Not Verified Memory Type Volatile
Memory Format DRAM Technology SDRAM - DDR3
Memory Size 4Gbit Memory Organization 256M x 16
Memory Interface Parallel Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns Access Time 20 ns
Voltage - Supply 1.425V ~ 1.575V Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount Package / Case 96-VFBGA
Supplier Device Package 96-FBGA (8x13) Base Product Number AS4C256

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