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APT77N60JC3

Product APT77N60JC3 is a discrete semiconductor module with a description indicating it's an FG MOSFET

Inventory:5,197

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Overview of APT77N60JC3

The APT77N60JC3 is a Power Field-Effect Transistor (Power MOSFET) optimized for ultra-low RDS(on), low Miller capacitance, and high-speed operations. It provides excellent performance for a wide range of applications, including power supplies, motion control systems, motor control applications, industrial applications, electric vehicle power systems, switched mode power supplies, high-frequency inverters, DC-DC converters, UPS systems, and amplifiers.

Pinout

The APT77N60JC3 pinout refers to the configuration and function of each pin in its SOT-227B-4 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the APT77N60JC3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by Microchip Tech to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Ultra Low RDS(on): The APT77N60JC3 boasts an ultra-low RDS(on) of 35mΩ@60A,10V, making it ideal for high-frequency switching applications.
  • Low Miller Capacitance: This Power MOSFET features low Miller capacitance, ensuring reduced charge injection during switching and minimized cross-talk between signals.
  • Ultra Low Gate Charge, Qg: The APT77N60JC3 has an ultra-low gate charge, reducing the energy needed to turn on and off the device, leading to improved efficiency in power conversion applications.
  • Avalanche Energy Rated: This component is rated for avalanche energy, making it suitable for high-voltage switching applications without the risk of catastrophic failure.
  • Extreme dv/dt Rated: The APT77N60JC3 is designed to withstand extreme dV/dt rates, ensuring reliable operation in high-frequency and high-power applications.
  • Dual die (parallel): This Power MOSFET features a dual-die design, allowing for parallel configuration of two identical devices, increasing current-handling capabilities and overall system performance.

Applications

  • Power supplies: The APT77N60JC3 is well-suited for use in power supplies, providing high efficiency and reliability in applications such as server power, telecommunications, and industrial systems.
  • Motion control systems: This Power MOSFET excels in motion control applications, offering precise current limiting and reduced energy loss during switching events.
  • Motor control applications: The APT77N60JC3 is suitable for motor control applications, including DC motor drives, AC induction motor controls, and stepper motor drivers.
  • Industrial applications: This component is also applicable in industrial applications such as robotics, automation, and industrial electronics, where reliability, efficiency, and high performance are crucial.
  • Electric vehicle power systems: The APT77N60JC3 can be used in electric vehicle power systems, providing a reliable and efficient means to control and regulate the flow of energy within these systems.
  • Switched mode power supplies: This Power MOSFET is suitable for use in switched-mode power supplies, operating at high frequencies and enabling compact designs with minimal heat generation.
  • High-frequency inverters: The APT77N60JC3 excels in high-frequency inverter applications, such as motor drives, lighting systems, and audio equipment.
  • DC-DC converters: This component can be used in DC-DC converter designs, offering precise control over output voltage and current, as well as fast response times to transient events.
  • UPS systems: The APT77N60JC3 is suitable for use in uninterruptible power supplies (UPS) as it provides high reliability, fast turn-on and off times, and minimized energy loss during switching events.
  • Amplifiers: This Power MOSFET can be used in amplifier designs, offering high current-handling capabilities and precise control over output voltage and current.

Advantages and Disadvantages

While the APT77N60JC3 offers numerous advantages, potential drawbacks include: * High power dissipation during operation * Limited operating frequency range (dependent on application) * Sensitive to temperature extremes However, these limitations are mitigated by careful design considerations and attention to thermal management.

Equivalents

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 35mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs 640 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
Power Dissipation (Max) 568W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Supplier Device Package ISOTOP®
Package / Case SOT-227-4, miniBLOC Base Product Number APT77N60

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APT77N60JC3

Product APT77N60JC3 is a discrete semiconductor module with a description indicating it's an FG MOSFET

Inventory:

5,197