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APT75GN120JDQ3

N-Channel 1.2KV 124A

Inventory:5,687

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Overview of APT75GN120JDQ3

The IGBT products offered by Microchip are designed to meet the demands of high-voltage and high-power applications. With a wide switching frequency range, these products are suitable for a variety of power supply applications, from minimal conduction loss to very-high-power-density SMPS applications. There are six product series available, each utilizing three different IGBT technologies: NPT, PT, and field stop. Whether you need a single IGBT or a Combi product with an anti-parallel DQ series diode, Microchip has the solution for your power management needs

Key Features

  • The APT75GN120JDQ3 is a high power density, high speed, and high frequency insulated gate bipolar transistor (IGBT) module
  • It has a Vces of 1200V, a continuous current rating of 75A, and a short circuit withstand time of 10µs
  • It also features low conduction and switching losses, making it suitable for a variety of high power applications
  • Application

  • The APT75GN120JDQ3 is a silicon carbide power MOSFET designed for use in high-power applications such as electric vehicles, solar inverters, and industrial motor drives
  • Its high voltage and current ratings make it ideal for applications that require high efficiency and reliability in harsh environments
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Type Discrete IGBT Package Type(s) D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264-MAX
    Power Dissipation (W) [max] 195 - 960 Collector Current (dc) (A) [max] 22 - 100

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      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

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