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APT60N60BCSG

Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm

Inventory:5,332

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Overview of APT60N60BCSG

The APT60N60BCSG is a high voltage N-channel enhancement mode power MOSFET designed to handle high power applications. It features a low on-resistance and high switching speed, making it suitable for power supply, motor control, and other high power electronic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • V: Thermal Pad

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT60N60BCSG for a visual representation.

Key Features

  • High Voltage Handling: The APT60N60BCSG can withstand high voltage levels, making it suitable for high power applications.
  • Low On-Resistance: This MOSFET features a low on-resistance, resulting in minimal power dissipation and high efficiency.
  • Fast Switching Speed: With high switching speed, it enables efficient and responsive operation in power electronic circuits.
  • Enhancement Mode: The enhancement mode design ensures easy and stable control of the MOSFET.

Note: For detailed technical specifications, please refer to the APT60N60BCSG datasheet.

Application

  • Power Supply: Ideal for use in high voltage power supply applications due to its high voltage handling capability.
  • Motor Control: Suitable for motor drive and control applications where high power handling is required.
  • Inverter and Converter Systems: Used in inverters and converters for efficient power management and conversion.

Functionality

The APT60N60BCSG is designed to handle high power with its high voltage capability, low on-resistance, and fast switching speed. It provides reliable and efficient power control in various applications.

Usage Guide

  • Gate Connection: Connect the gate (G) to the control circuit for switching the MOSFET.
  • Drain Connection: Connect the load or power supply to the drain (D) terminal.
  • Source Connection: Connect the source (S) to the ground or return path of the circuit.

Frequently Asked Questions

Q: Is the APT60N60BCSG suitable for high frequency switching applications?
A: Yes, the APT60N60BCSG features a fast switching speed, making it appropriate for high frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the APT60N60BCSG:

  • IRFP4668: A high voltage power MOSFET with comparable specifications, suitable for high power applications.
  • FDPF51N25: This N-channel MOSFET offers similar high voltage handling and fast switching characteristics.
  • IXTK20N120: An alternative high voltage MOSFET with enhanced power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V
Power Dissipation (Max) 431W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247 [B]
Package / Case TO-247-3 Base Product Number APT60N60

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APT60N60BCSG

Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm

Inventory:

5,332