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APT50M50JVR

Power component

Inventory:9,995

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Overview of APT50M50JVR

The APT50M50JVR is a high-voltage N-channel enhancement mode power MOSFET designed for high power switching applications. It features a high drain-source voltage rating and low on-resistance, making it ideal for power supply, motor control, and other high-power switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT50M50JVR MOSFET for a visual representation.

Key Features

  • High Drain-Source Voltage Rating: The APT50M50JVR offers a high drain-source voltage rating, suitable for high-voltage applications.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • Enhancement Mode: The enhancement mode design ensures ease of control and high switching efficiency.
  • Fast Switching Speed: This MOSFET has a fast switching speed, enabling rapid switching in power electronics circuits.
  • Temperature Stability: The APT50M50JVR exhibits good temperature stability, maintaining consistent performance across operating conditions.

Note: For detailed technical specifications, please refer to the APT50M50JVR datasheet.

Application

  • Power Supplies: Ideal for use in high-voltage power supply designs for industrial and high-power applications.
  • Motor Control: Suitable for motor drive and control circuits where high voltage and current handling capabilities are required.
  • Switching Circuits: Used in various high-power switching circuits such as inverters, converters, and power amplifiers.

Functionality

The APT50M50JVR is a high-voltage N-channel MOSFET designed for efficient power switching applications. It provides high performance and reliability in demanding power electronics systems.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to switch the MOSFET between its on and off states.
  • Drain-Source Connection: Connect the load or power circuit between the drain and source terminals.
  • Heat Dissipation: Ensure adequate heat sinking to dissipate the heat generated during high-power operation.

Frequently Asked Questions

Q: Is the APT50M50JVR suitable for high-frequency switching applications?
A: Yes, the APT50M50JVR features a fast switching speed, making it suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the APT50M50JVR:

  • FDPF51N25: A high-voltage N-channel MOSFET with comparable performance characteristics.
  • IXFH50N50: This MOSFET offers similar high-voltage switching capabilities and low on-resistance for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Type Silicon Discrete MOSFET Continuous Drain Current at 25°C (A) [max] 20 - 103
Package Type(s) D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264MAX Continuous Drain Current at 25°C [I(D)] (A) [family max] 103

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