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APT35GN120L2DQ2G

Green IGBTs rated at 379W and 1.2kV

Inventory:6,050

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Overview of APT35GN120L2DQ2G

The APT35GN120L2DQ2G is a power MOSFET designed for high power switching applications. It features low on-state resistance and high switching speed, making it suitable for use in power supplies, motor control, and other high-current applications. This MOSFET can handle high power levels with efficiency and precision.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • ID: Current Sense Pin
  • VCC: Power Supply Voltage
  • COM: Common Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT35GN120L2DQ2G MOSFET for a visual representation.

Key Features

  • High Power Handling: The APT35GN120L2DQ2G is capable of handling high power levels, making it suitable for high-power applications.
  • Low On-State Resistance: This MOSFET features low on-state resistance, resulting in minimal power loss and efficient operation.
  • Fast Switching Speed: With high switching speed, this MOSFET enables rapid switching in power control circuits.
  • Low Gate Charge: The low gate charge of the APT35GN120L2DQ2G reduces the drive requirements and enhances efficiency.
  • Temperature Stability: It exhibits good temperature stability, ensuring reliable performance across a range of operating conditions.

Note: For detailed technical specifications, please refer to the APT35GN120L2DQ2G datasheet.

Application

  • Power Supplies: Ideal for use in high-power switching power supply designs.
  • Motor Control: Suitable for motor drive and control applications requiring high current handling capabilities.
  • Power Inverters: Used in power inverter circuits for efficient power conversion and control.

Functionality

The APT35GN120L2DQ2G MOSFET provides high power handling, low on-state resistance, and fast switching speed, enabling precise and efficient control in power electronics applications.

Usage Guide

  • Power Supply: Connect the power supply voltage (VCC) to the appropriate pin based on the circuit design.
  • Gate Control: Apply the control signals to the gate (G) pin for precise switching and control of the MOSFET.
  • Current Sensing: Utilize the current sense pin (ID) for monitoring and feedback purposes in current-critical applications.

Frequently Asked Questions

Q: Is the APT35GN120L2DQ2G suitable for high-frequency switching applications?
A: Yes, the APT35GN120L2DQ2G's fast switching speed makes it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the APT35GN120L2DQ2G:

  • IRF540N: A power MOSFET with comparable power handling and switching characteristics.
  • FQP30N06L: This MOSFET offers similar performance and can be used as an alternative to the APT35GN120L2DQ2G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Type Discrete IGBT Package Type(s) D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264-MAX
Power Dissipation (W) [max] 195 - 960 Collector Current (dc) (A) [max] 22 - 100

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APT35GN120L2DQ2G

Green IGBTs rated at 379W and 1.2kV

Inventory:

6,050