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APT150GN120JDQ4

Single IGBT transistor module capable of handling up to 1.2kV, with a current rating of 99A, in SOT227B package

Inventory:7,100

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Overview of APT150GN120JDQ4

The APT150GN120JDQ4 is a silicon carbide power MOSFET module designed for high-power applications. This module combines high performance with low conduction and switching losses, making it ideal for power electronic systems requiring efficiency and reliability.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Drain Voltage
  • VSS: Source Voltage
  • G: Gate Control
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT150GN120JDQ4 module for a visual representation.

Key Features

  • Silicon Carbide Technology: Utilizes silicon carbide for high performance and efficiency.
  • Low Conduction Losses: Minimizes conduction losses for improved energy efficiency.
  • High Switching Speeds: Offers fast switching speeds for enhanced power control.
  • High Temperature Operation: Capable of operating at high temperatures for demanding applications.
  • Built-in Protections: Includes overcurrent and overtemperature protections for device reliability.

Note: For detailed technical specifications, please refer to the APT150GN120JDQ4 datasheet.

Application

  • Power Inverters: Suitable for use in power inverters for renewable energy systems and motor drives.
  • Industrial Power Supplies: Ideal for industrial power supplies requiring high efficiency and reliability.
  • Electric Vehicles: Used in electric vehicle powertrain systems for efficient power delivery.

Functionality

The APT150GN120JDQ4 silicon carbide power MOSFET module provides high-performance power switching capabilities, enabling efficient power conversion in various high-power applications.

Usage Guide

  • Power Connections: Connect the VDD (Drain), VSS (Source), and G (Gate) pins to the appropriate power and control signals.
  • Cooling: Ensure adequate cooling measures are implemented due to the high-power nature of the module.
  • Protection: Monitor overcurrent and temperature to prevent device damage during operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the APT150GN120JDQ4?
A: The APT150GN120JDQ4 has a maximum drain-source voltage rating of 1200V.

Q: Can the APT150GN120JDQ4 be paralleled for higher power applications?
A: Yes, multiple APT150GN120JDQ4 modules can be paralleled to increase power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the APT150GN120JDQ4:

  • STPSC2006CW: A silicon carbide Schottky diode module with similar efficiency and performance characteristics.
  • IXYS CPC1966Y: Another silicon carbide power MOSFET module known for high power handling and efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Type Discrete IGBT Package Type(s) D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264-MAX
Power Dissipation (W) [max] 195 - 960 Collector Current (dc) (A) [max] 22 - 100

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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APT150GN120JDQ4

Single IGBT transistor module capable of handling up to 1.2kV, with a current rating of 99A, in SOT227B package

Inventory:

7,100