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AOTF12N60

Product AOTF12N60 is a N Channel MOSFET with a voltage rating of 600V, current rating of 12A, and power dissipation of 50W

Inventory:8,690

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Overview of AOTF12N60

The AOTF12N60 is a power MOSFET transistor designed for high-performance applications, offering low on-state resistance and fast switching capabilities. This MOSFET is suitable for various power electronics and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram showing how to incorporate the AOTF12N60 MOSFET in your circuit design for optimal performance.

Key Features

  • Low On-State Resistance: The AOTF12N60 offers a low on-state resistance for efficient power conduction.
  • High Switching Speed: With fast switching capabilities, this MOSFET enables rapid switching transitions in power circuits.
  • High Power Handling Capacity: Designed to handle high power levels, making it suitable for power applications.
  • Enhanced Thermal Performance: The transistor's package is optimized for improved thermal dissipation, ensuring proper heat management.
  • Robust Construction: Built to withstand high voltage and current stresses, providing reliability in demanding environments.

Note: For detailed technical specifications, please refer to the AOTF12N60 datasheet.

Application

  • Power Electronics: Ideal for use in power supply circuits, motor drives, and power inverters.
  • Switching Circuits: Suitable for switching applications where fast and efficient switching is required.
  • Voltage Regulation: Can be utilized in voltage regulator circuits for stable power output.

Functionality

The AOTF12N60 power MOSFET transistor is designed to control and regulate power in various electronic systems, providing efficient power management and control capabilities.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the on/off state of the MOSFET for desired switching operation.
  • Heat Dissipation: Ensure proper heat sinking and thermal management to maintain the MOSFET within safe operating temperatures.
  • Load Connection: Connect the load between the drain and source terminals to utilize the MOSFET for power control.

Frequently Asked Questions

Q: Is the AOTF12N60 suitable for high-frequency switching applications?
A: Yes, the AOTF12N60 is designed for high-speed switching applications where fast response times are critical.

Equivalent

For similar functionality, consider these alternatives to the AOTF12N60:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics.
  • STP75NF75: This MOSFET offers similar power handling capabilities and switching speed to the AOTF12N60.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status NRND
SVHC Yes SVHC Exceeds Threshold Yes
Category Power MOSFET Configuration Single
Channel Mode Enhancement Channel Type N
Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30 Maximum Continuous Drain Current (A) 12
Maximum Drain Source Resistance (MOhm) 550@10V Typical Gate Charge @ Vgs (nC) 40@10V
Typical Gate Charge @ 10V (nC) 40 Typical Input Capacitance @ Vds (pF) 1751@25V
Maximum Power Dissipation (mW) 50000 Typical Fall Time (ns) 74
Typical Rise Time (ns) 70 Typical Turn-Off Delay Time (ns) 122
Typical Turn-On Delay Time (ns) 39 Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150 Packaging Tape and Reel
Mounting Through Hole Package Height 15.87
Package Width 4.7 Package Length 10.16
PCB changed 3 Tab Tab
Standard Package Name TO Supplier Package TO-220F
Pin Count 3 Lead Shape Through Hole

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AOTF12N60

Product AOTF12N60 is a N Channel MOSFET with a voltage rating of 600V, current rating of 12A, and power dissipation of 50W

Inventory:

8,690