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AO4435L

With a power dissipation of 3.1W and surface-mount design, AO4435L is a P-channel MOSFET suitable for various applications

Inventory:8,037

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Overview of AO4435L

Meet the AO4435L, the ultimate P-channel enhancement mode field-effect transistor (FET) designed for power management applications. Boasting a maximum drain-source voltage of -30V and a continuous drain current of -8A, it's the go-to choice for medium to high power applications. Its low on-resistance of 23mOhms is a game-changer, minimizing power loss and enhancing circuit efficiency. What's more, its fast switching speed, with a typical turn-on time of 6.5ns and a turn-off time of 9.5ns, makes it a perfect fit for applications that require lightning-fast response times. And with its compact DFN5x6 package and small footprint of 2.9mm x 1.5mm, it's the ideal solution for space-saving PCB designs and compact electronic devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tape & Reel (TR) Product Status Obsolete
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 20V Rds On (Max) @ Id, Vgs 14mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) Base Product Number AO44

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