• AO3418 SOT-23-3
AO3418 SOT-23-3

AO3418

Transistor

Inventory:4,454

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Overview of AO3418

Description:The AOS FETs Single AO3418 is a N-Channel MOSFET with a drain-source voltage of 30V and a drain current of 3.8A. It is housed in a SOT23 package and is designed for use in a wide range of applications.Features:• Low on-resistance• Low gate charge• Low input capacitance• High speed switching• High power and current handling capability• Ease of paralleling• RoHS compliantApplications:The AOS FETs Single AO3418 is suitable for a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in consumer electronics, automotive, and industrial applications.

AO3418

Key Features

  • Low on-resistance
  • Low gate charge
  • Low input capacitance
  • High speed switching
  • High power and current handling capability
  • Ease of paralleling
  • RoHS compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Samacsys Manufacturer Alpha & Omega Semiconductors
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 3.8 A Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.055 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 1.4 W
Power Dissipation-Max (Abs) 1.4 W Pulsed Drain Current-Max (IDM) 15 A
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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