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AO3409L

With its low power dissipation and high voltage handling capabilities, the AO3409L is a reliable choice for various electronic designs

Inventory:9,682

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Overview of AO3409L

The AO3409L is a P-channel enhancement mode field-effect transistor (FET) in a SOT-23 package. It is designed for use in low voltage, high-speed switching applications such as battery management, power supplies, and load switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the AO3409L transistor for a visual representation.

Key Features

  • P-Channel FET: Enhancement mode P-channel transistor for efficient power management.
  • Low Voltage Operation: Suitable for low voltage applications, enhancing battery management and portable device designs.
  • High-Speed Switching: Enables rapid switching for power supply and load control applications.
  • SOT-23 Package: Compact and space-saving SOT-23 package for convenient PCB layout and smaller footprint.
  • Low On-Resistance: Provides efficient current flow with minimal voltage drop, contributing to power efficiency.

Note: For detailed technical specifications, please refer to the AO3409L datasheet.

Application

  • Battery Management: Ideal for use in battery management systems for portable and handheld devices.
  • Power Supplies: Suitable for high-speed switching in power supply units and DC-DC converters.
  • Load Switching: Used in various load switching applications to control power distribution.

Functionality

The AO3409L P-channel FET is designed to facilitate efficient low voltage, high-speed switching applications, providing reliable power management and control.

Usage Guide

  • Gate Connection: Connect the control signal to the gate (G) pin of the AO3409L transistor.
  • Drain Connection: Use the drain (D) pin for the output/load connection in the circuit.
  • Source Connection: Connect the source (S) pin to the ground or common reference point.

Frequently Asked Questions

Q: What is the maximum voltage rating for the AO3409L?
A: The AO3409L has a maximum voltage rating specified in the datasheet. Please refer to the datasheet for precise details.

Q: Is the AO3409L suitable for high-frequency applications?
A: The AO3409L is designed for high-speed switching applications, making it suitable for high-frequency operation within its specified parameters.

Equivalent

For similar functionalities, consider these alternatives to the AO3409L:

  • AON7400: This P-channel FET offers comparable performance and characteristics to the AO3409L in a different package or form factor.
  • Si2302: A similar P-channel FET from Siliconix with equivalent specifications and functionality to the AO3409L.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Tape & Reel (TR) Part Status Obsolete
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 130mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 15 V
Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant Base Product Number AO34

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Warranty, Returns, and Additional Information

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AO3409L

With its low power dissipation and high voltage handling capabilities, the AO3409L is a reliable choice for various electronic designs

Inventory:

9,682