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A3V56S40GTP-60

It operates at a speed of 166MHz and has a CL3 latency

Inventory:6,218

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Overview of A3V56S40GTP-60

The A3V56S40GTP-60 is a high-speed CMOS synchronous SRAM (Static Random Access Memory) module with a capacity of 4Mb (512K x 8 bits). It operates at a clock frequency of 60MHz, providing fast and reliable data storage and access capabilities for various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power Supply Voltage
  • GND: Ground Connection
  • WE: Write Enable
  • OE: Output Enable
  • CE: Chip Enable
  • AD0-AD7: Address/Data Inputs/Outputs
  • CLK: Clock Input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the A3V56S40GTP-60 SRAM module for a visual representation.

Key Features

  • High-Speed Operation: The A3V56S40GTP-60 operates at a clock frequency of 60MHz, providing rapid data access for demanding applications.
  • Large Capacity: With a capacity of 4Mb, this SRAM module offers ample storage for data-intensive processes.
  • Low Power Consumption: Utilizing CMOS technology, the A3V56S40GTP-60 minimizes power usage, ideal for energy-efficient designs.
  • Synchronous Interface: The SRAM module features a synchronous interface for synchronized data transfers, enhancing system performance.
  • Wide Voltage Range: Supports a wide voltage range for compatibility with various electronic systems.

Note: For detailed technical specifications, please refer to the A3V56S40GTP-60 datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring fast and reliable data storage.
  • Networking Equipment: Suitable for buffering data in networking equipment to support high-speed data processing.
  • Telecommunication Systems: Used in telecommunication systems for quick data access and transfer.

Functionality

The A3V56S40GTP-60 is a high-speed CMOS SRAM module designed to store and retrieve data efficiently at a clock frequency of 60MHz. It caters to applications demanding quick and seamless data operations.

Usage Guide

  • Power Supply: Connect VDD (Pin -) to the power supply voltage and GND (Pin -) to the ground.
  • Data Transfer: Use WE, OE, and CE pins to control write, output, and chip enable operations, respectively.
  • Clock Input: Input a clock signal to the CLK pin for synchronous data transfers.

Frequently Asked Questions

Q: What is the maximum clock frequency supported by the A3V56S40GTP-60?
A: The A3V56S40GTP-60 operates at a maximum clock frequency of 60MHz for high-speed data access.

Q: Can the A3V56S40GTP-60 operate at lower voltages for power-sensitive applications?
A: Yes, the A3V56S40GTP-60 supports a wide voltage range and can operate at lower voltages for power-sensitive applications, offering flexibility in design.

Equivalent

For similar functionalities, consider these alternatives to the A3V56S40GTP-60:

  • AS6C4008: This is a 4Mb asynchronous SRAM module with comparable capacity and performance characteristics.
  • IS61C5128: A 4Mb synchronous SRAM module offering similar speed and voltage range specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type SDRAM Mounting Style SMD/SMT
Package / Case TSOP-54 Data Bus Width 16 bit
Organization 16 M x 16 Memory Size 256 Mbit
Maximum Clock Frequency 166 MHz Supply Voltage - Max 3.6 V
Supply Voltage - Min 3 V Supply Current - Max 80 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature + 70 C
Series SDRAM Brand Zentel Japan
Moisture Sensitive Yes Product Type DRAM
Factory Pack Quantity 1080 Subcategory Memory & Data Storage
Tradename Zentel Japan Unit Weight 0.019154 oz

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A3V56S40GTP-60

It operates at a speed of 166MHz and has a CL3 latency

Inventory:

6,218