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2SK2788VYTR-E

Trans MOSFET N-Channel Silicon 60V 2A 4-Pin(3+Tab) UPAK Tape and Reel

Inventory:2,719

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Overview of 2SK2788VYTR-E

The 2SK2788VYTR-E is an N-channel MOSFET transistor designed for high-speed switching applications in electronic circuits. It features a low gate charge and high current capacity, making it suitable for use in power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SK2788VYTR-E for a visual representation.

Key Features

  • N-Channel MOSFET: The 2SK2788VYTR-E is an N-channel MOSFET suitable for high-speed switching applications.
  • Low Gate Charge: This MOSFET has a low gate charge, enabling fast switching speeds.
  • High Current Capacity: It can handle high currents, making it suitable for power management and motor control.
  • Low On-Resistance: The MOSFET exhibits low on-resistance, minimizing power loss and improving efficiency.

Note: For detailed technical specifications, please refer to the 2SK2788VYTR-E datasheet.

Application

  • Power Management: Ideal for use in power supply switching regulators and DC-DC converters.
  • Motor Control: Suitable for controlling motors and actuators in industrial automation and robotics.
  • Switching Circuits: Used in electronic switching circuits requiring high-speed performance.

Functionality

The 2SK2788VYTR-E MOSFET transistor provides efficient and reliable switching capabilities, essential for various electronic applications.

Usage Guide

  • Gate Drive: Apply the appropriate voltage to the gate (G) terminal to control the switching operation.
  • Load Connection: Connect the source (S) and drain (D) terminals as per the circuit requirements.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the 2SK2788VYTR-E?
A: The maximum drain-source voltage rating is specified in the datasheet, typically around 100V.

Q: Can the 2SK2788VYTR-E be used for PWM applications?
A: Yes, the 2SK2788VYTR-E is suitable for Pulse Width Modulation (PWM) applications due to its fast switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2SK2788VYTR-E:

  • IRF540N: An N-channel MOSFET with similar voltage and current ratings, widely used in power switching applications.
  • FQP30N06L: This MOSFET offers comparable performance characteristics to the 2SK2788VYTR-E and is suitable for high-speed switching.
  • STP55NF06L: Another alternative MOSFET with low on-resistance and high current capacity, suitable for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type UPAK Carrier Type Embossed Tape

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2SK2788VYTR-E

Trans MOSFET N-Channel Silicon 60V 2A 4-Pin(3+Tab) UPAK Tape and Reel

Inventory:

2,719