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2SK1317-E

Ideal for use in switching circuits that require high performance

Quantity Unit Price(USD) Ext. Price
1 $3.682 $3.68
10 $3.180 $31.80
30 $2.881 $86.43
90 $2.581 $232.29
510 $2.441 $1,244.91
990 $2.380 $2,356.20

Inventory:9,254

*The price is for reference only.
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Overview of 2SK1317-E

The 2SK1317-E is a power MOSFET transistor designed for high-power switching applications. This MOSFET features a high drain-source voltage rating and low on-resistance, making it suitable for power management and amplification in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SK1317-E MOSFET for a visual representation.

Key Features

  • High Drain-Source Voltage Rating: The 2SK1317-E has a high maximum drain-source voltage, allowing for operation in high-voltage circuits.
  • Low On-Resistance: This MOSFET exhibits low on-resistance, reducing power losses and heat generation during operation.
  • Fast Switching Speed: With its fast switching characteristics, the 2SK1317-E is suitable for high-frequency switching applications.
  • High Power Handling Capacity: Capable of handling high power levels, making it ideal for power circuits and amplifiers.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation to maintain optimal operating temperatures.

Note: For detailed technical specifications, please refer to the 2SK1317-E datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as power supplies and voltage regulators.
  • Switching Circuits: Suitable for high-power switching applications in electronic devices and industrial equipment.
  • Audio Amplification: Can be employed in audio amplifiers and high-power audio systems for efficient signal amplification.

Functionality

The 2SK1317-E power MOSFET transistor enables efficient power switching and amplification in electronic circuits, providing high performance and reliability for various applications.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal to switch the MOSFET on and off.
  • Drain Connection: The drain pin (D) is where the output voltage is taken from in the circuit.
  • Source Connection: Connect the source pin (S) to the ground or return path of the circuit.

Frequently Asked Questions

Q: Is the 2SK1317-E suitable for high-frequency applications?
A: Yes, the 2SK1317-E features fast switching speed and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the 2SK1317-E:

  • IRF540N: A power MOSFET transistor with comparable characteristics to the 2SK1317-E for power switching applications.
  • BSP149: This is another power MOSFET option with similar power handling capacity and voltage ratings to the 2SK1317-E.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type TO-3P Standard Pkg. Type TO-3P
Carrier Type Tube

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2SK1317-E

Ideal for use in switching circuits that require high performance

Inventory:

9,254