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2SJ655

Robust P-channel MOSFET for high-reliability design

Inventory:4,925

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Overview of 2SJ655

The 2SJ655 is a P-channel MOSFET transistor designed for high-power switching applications. It features a low on-resistance and high breakdown voltage, making it suitable for use in power management circuits and amplifier designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SJ655 MOSFET for a visual representation.

Key Features

  • High Power Switching: The 2SJ655 is capable of handling high power loads, making it ideal for power switching applications.
  • Low On-Resistance: This MOSFET transistor offers low on-resistance for efficient power management and reduced heat generation.
  • High Breakdown Voltage: With a high breakdown voltage rating, the 2SJ655 ensures reliable operation under high voltage conditions.
  • Fast Switching Speed: The MOSFET provides fast switching characteristics, enabling quick response times in switching applications.
  • Robust Construction: The 2SJ655 is built with durable materials to withstand challenging operating environments.

Note: For detailed technical specifications, please refer to the 2SJ655 datasheet.

Application

  • Power Management Circuits: Suitable for use in power management circuits to control high-power devices.
  • Audio Amplifiers: Can be utilized in amplifier designs for efficient signal amplification and power handling.
  • Switching Circuits: Ideal for switching applications where high-power control is required.

Functionality

The 2SJ655 P-channel MOSFET transistor is designed to efficiently switch high currents and voltages in various electronic circuits, providing reliable power management and amplification capabilities.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching the transistor.
  • Drain Connection: Connect the load to be controlled to the drain (D) pin.
  • Source Connection: Connect the source (S) pin to the ground reference or circuit common.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the 2SJ655?
A: The 2SJ655 is designed to handle high power loads up to a certain limit specified in the datasheet.

Q: Is the 2SJ655 suitable for high-frequency switching applications?
A: The 2SJ655 can be used for switching applications but may have limitations in high-frequency operation due to its characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2SJ655:

  • IRF4905: A P-channel MOSFET transistor with similar power handling capabilities and characteristics.
  • BUK9609-55A: This MOSFET transistor offers comparable performance to the 2SJ655 and can be used as an alternative.
  • FQP27P06: Another P-channel MOSFET transistor suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Bulk Part Status Obsolete
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Rds On (Max) @ Id, Vgs 136mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 20 V Power Dissipation (Max) 2W (Ta), 25W (Tc)
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220ML Package / Case TO-220-3 Full Pack

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2SJ655

Robust P-channel MOSFET for high-reliability design

Inventory:

4,925