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2SD2675TL

NPN transistor with low VCE(sat)

Quantity Unit Price(USD) Ext. Price
1 $0.382 $0.38
200 $0.153 $30.60
500 $0.147 $73.50
1000 $0.145 $145.00

Inventory:8,113

*The price is for reference only.
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Overview of 2SD2675TL

The 2SD2675TL is a NPN Epitaxial Planar Silicon Transistor designed for use in high-speed switching applications.It features high current capability,low saturation voltage,and fast switching speed,making it ideal for various electronic circuits requiring efficient switching performance.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • E:Emitter
  • B:Base
  • C:Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SD2675TL transistor for a visual representation.

Key Features

  • NPN Epitaxial Planar Silicon Transistor:The 2SD2675TL is constructed with NPN silicon material in an epitaxial planar design for high performance.
  • High Current Capability:This transistor offers high current handling capacity,allowing for efficient power management in circuits.
  • Low Saturation Voltage:With a low saturation voltage,the 2SD2675TL minimizes power loss during switching operations.
  • Fast Switching Speed:Featuring fast switching characteristics,this transistor enables quick transitions between on and off states.

Note:For detailed technical specifications,please refer to the 2SD2675TL datasheet.

Application

  • Switching Circuits: Ideal for use in high-speed switching circuits such as pulse generators and power supplies.
  • Amplifier Circuits: Suitable for amplifier applications requiring high current amplification.
  • Power Management: Used in electronic circuits for efficient power management and control.

Functionality

The 2SD2675TL transistor is designed for high-speed switching operations with high current capability and low saturation voltage.It provides reliable and efficient performance in various electronic applications.

Usage Guide

  • Emitter-Base Collector Configuration:Connect the emitter(E),base(B),and collector(C)pins based on your circuit requirements for proper transistor operation.
  • Switching Operations:Apply appropriate voltage and current to the base(B)and collector(C)pins to control the switching behavior of the transistor.
  • Heat Dissipation: Ensure adequate heat sinking to maintain the temperature within acceptable limits during operation.

Frequently Asked Questions

Q:What is the maximum current rating of the 2SD2675TL transistor?
A:The 2SD2675TL has a maximum current rating of XYZ Amps.

Q:Can the 2SD2675TL be used in high-frequency applications?
A:Yes,this transistor offers fast switching speed suitable for high-frequency applications.

Equivalent

For similar functionalities,consider these alternatives to the 2SD2675TL:

  • 2SC5200:This is a complementary NPN transistor with high current and power handling capabilities.
  • 2N3055: A popular NPN power transistor known for its high current amplification and robust performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case TSMT-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 30 V Collector- Base Voltage VCBO 30 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 120 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 1 W
Gain Bandwidth Product fT 320 MHz Maximum Operating Temperature + 150 C
Series 2SD2675 Brand ROHM Semiconductor
Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 270
DC Current Gain hFE Max 680 Height 0.85 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.6 mm
Part # Aliases 2SD2675 Unit Weight 0.198804 oz

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