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2SD2012

Bipolar Transistors - BJT NPN Silcon Pwr Trans

Quantity Unit Price(USD) Ext. Price
5 $0.238 $1.19
50 $0.192 $9.60
150 $0.172 $25.80
500 $0.147 $73.50
2500 $0.136 $340.00
5000 $0.130 $650.00

Inventory:4,099

*The price is for reference only.
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Overview of 2SD2012

The 2SD2012 is a bipolar junction transistor (BJT) optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The 2SD2012 pinout refers to the configuration and function of each pin in its TO-220F-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the 2SD2012 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High-Speed Operation: The 2SD2012 is designed for high-speed applications, making it suitable for use in modern electronic systems that require fast switching times.
  • Low-Voltage Operation: This transistor can operate at low voltage levels, making it an excellent choice for battery-powered devices or systems with limited power supply.
  • High-Gain Amplification: The 2SD2012 provides high-gain amplification, allowing it to amplify weak signals and improve the overall performance of electronic circuits.
  • Low Input Current: This transistor has a low input current, which reduces power consumption and heat generation in electronic systems.
  • High-Current Handling: The 2SD2012 can handle high currents, making it suitable for use in applications that require significant power handling capabilities.

Applications

  • Analog-to-Digital Converters (ADCs): The 2SD2012 is used in ADCs to amplify weak analog signals and convert them into digital signals.
  • Digital Signal Processing (DSP) Systems: This transistor is used in DSP systems to amplify and process digital signals, enabling high-speed data processing and manipulation.
  • Power Supplies: The 2SD2012 can be used in power supplies to regulate voltage levels and provide a stable power output.
  • Semiconductor Testing Equipment: This transistor is used in semiconductor testing equipment to amplify weak signals and improve the accuracy of test results.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The 2SD2012's high-speed operation enables it to handle fast-switching applications with ease, making it an excellent choice for modern electronic systems.
  • Low-Voltage Operation: This transistor's ability to operate at low voltage levels makes it suitable for use in battery-powered devices or systems with limited power supply.

Disadvantages

  • Sensitivity to Temperature Changes: The 2SD2012 is sensitive to temperature changes, which can affect its performance and reliability in certain applications.
  • Limited Current Handling: While the 2SD2012 can handle high currents, it has limitations when it comes to handling extremely high current levels.

Equivalents

For similar functionalities, consider these alternatives to the 2SD2012:

  • STP16N6L: This transistor is a high-speed NPN power transistor with a similar pinout and functionality to the 2SD2012.
  • BC847B: The BC847B is another high-speed NPN power transistor that can be used as an alternative to the 2SD2012 in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-220F-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 3 A Pd - Power Dissipation 25 W
Gain Bandwidth Product fT 3 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series 2SD2012
Brand STMicroelectronics DC Collector/Base Gain hfe Min 20
DC Current Gain hFE Max 320 Height 9.39 mm
Length 10.36 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 50 Subcategory Transistors
Technology Si Width 4.9 mm
Unit Weight 0.127339 oz

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2SD2012

Bipolar Transistors - BJT NPN Silcon Pwr Trans

Inventory:

4,099