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2SCR513P5

Transistors - Bipolar BJT

Inventory:9,584

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Overview of 2SCR513P5

The 2SCR513P5 is a high-power NPN silicon transistor designed for power amplifier and switching applications. This transistor features high voltage and current capability, making it suitable for use in various electronic circuits where high power handling is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Current flows out through this terminal
  • Base: Controls the flow of current through the transistor
  • Collector: Current enters the transistor through this terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SCR513P5 transistor for a visual representation.

Key Features

  • High-Power NPN Transistor: The 2SCR513P5 is a high-power NPN silicon transistor suitable for power amplifier and switching applications.
  • High Voltage and Current Capability: This transistor can handle high voltages and currents, making it ideal for high-power circuits.
  • Reliable Performance: The 2SCR513P5 offers reliable performance in demanding applications requiring high power amplification or switching.
  • Wide Operating Temperature Range: Operates effectively across a wide temperature range, ensuring stability in various environmental conditions.

Note: For detailed technical specifications, please refer to the 2SCR513P5 datasheet.

Application

  • Power Amplifiers: Ideal for use in power amplifier circuits for audio or radio frequency applications.
  • Switching Circuits: Suitable for switching applications where high power handling is necessary.
  • Voltage Regulators: Can be used in voltage regulator circuits to regulate and stabilize voltage levels.

Functionality

The 2SCR513P5 transistor is designed to amplify or switch electronic signals at high power levels. It functions as a reliable and efficient component in power circuits requiring NPN transistor characteristics.

Usage Guide

  • External Connections: Connect the emitter, base, and collector terminals to the respective points in your circuit for proper operation.
  • Voltage and Current Ratings: Ensure that the voltage and current levels in your circuit do not exceed the maximum ratings specified in the datasheet.
  • Heat Dissipation: Provide adequate heat sinking or cooling mechanisms for the 2SCR513P5 to prevent overheating during operation.

Frequently Asked Questions

Q: Is the 2SCR513P5 suitable for high-frequency applications?
A: Yes, the 2SCR513P5 is suitable for high-frequency applications where high power amplification is required.

Equivalent

For similar functionalities, consider these alternatives to the 2SCR513P5:

  • 2N3055: A popular high-power NPN transistor with similar characteristics to the 2SCR513P5.
  • MJ15003: This NPN power transistor is a suitable alternative for high-power amplifier applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT Brand ROHM Semiconductor
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Part # Aliases 2SCR513P5T100

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2SCR513P5

Transistors - Bipolar BJT

Inventory:

9,584