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2SC5865TLR

Bipolar transistors NPN 60V 1A

Quantity Unit Price(USD) Ext. Price
1000 $0.078 $78.00
500 $0.079 $39.50
200 $0.082 $16.40
1 $0.204 $0.20

Inventory:5,193

*The price is for reference only.
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Overview of 2SC5865TLR

The 2SC5865TLR is a Bipolar (BJT) Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The 2SC5865TLR pinout refers to the configuration and function of each pin in its SC-96 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the 2SC5865TLR has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High-Speed Operation: The 2SC5865TLR is designed for high-speed applications, capable of operating at speeds up to 250MHz.
  • Low-Voltage Operation: This transistor can operate effectively at low voltage levels, making it suitable for a wide range of applications.
  • Small Package: The SC-96 package of the 2SC5865TLR is compact and efficient, taking up minimal space in electronic devices.
  • High-Frequency Gain: This transistor boasts high-frequency gain, making it suitable for high-speed communication applications.
  • Surface Mount Compatible: The 2SC5865TLR is designed to be surface mount compatible, simplifying integration into modern electronic devices.

Applications

  • High-Speed Digital Signal Processing: The 2SC5865TLR can be used in high-speed digital signal processing applications where low power consumption and high-speed operation are crucial.
  • Analog-to-Digital Conversion: This transistor is also suitable for analog-to-digital conversion applications due to its high-frequency gain and low voltage operation.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: Enables efficient signal processing at high speeds.
  • Low Power Consumption: Reduces power consumption in electronic devices, prolonging their lifespan.

Disadvantages

  • Precise Design Required: The 2SC5865TLR requires precise design and installation to ensure optimal performance.
  • Sensitivity to Environmental Conditions: This transistor may be sensitive to environmental conditions such as temperature, humidity, and vibration, which can affect its performance.

Equivalents

For similar functionalities, consider these alternatives to the 2SC5865TLR:

  • 2N5109: A high-frequency transistor for audio and RF applications with similar specifications.
  • BC857B: A high-speed NPN transistor with a wide current range, suitable for various applications.
  • TIP127C: A power Darlington transistor for high-power amplifier applications with a similar operating voltage.

Frequently Asked Questions

Q: What is the maximum operating frequency of this transistor?
A: 250MHz.

Q: How does this transistor differ from others in its class?
A: The 2SC5865TLR features low-voltage operation, high-frequency gain, and a small package size compared to other bipolar transistors.

Q: What is the most suitable application for this transistor?
A: The 2SC5865TLR is well-suited for high-speed digital signal processing applications where low power consumption and high-speed operation are crucial.

Q: Are there any specific installation considerations for this transistor?
A: Yes, the 2SC5865TLR requires precise design and installation to ensure optimal performance. Consult the datasheet and manufacturer recommendations for more information.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ROHM Semiconductor Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 1 A
Pd - Power Dissipation 500 mW Gain Bandwidth Product fT 250 MHz
Maximum Operating Temperature + 150 C Series 2SC5865
Brand ROHM Semiconductor DC Collector/Base Gain hfe Min 180
DC Current Gain hFE Max 180 at 100 mA, 2 V Height 0.85 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.6 mm

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2SC5865TLR

Bipolar transistors NPN 60V 1A

Inventory:

5,193