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2SC3506

800V Breakdown Voltage

Inventory:7,048

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Overview of 2SC3506

The 2SC3506 is a high-frequency power amplifier transistor designed for use in RF amplifier circuits and high-frequency applications. This transistor offers high output power and efficiency, making it suitable for amplification in various radio frequency systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Output
  • Collector (C): Power supply
  • Base (B): Input control

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SC3506 transistor for a visual representation.

Key Features

  • High-Frequency Operation: The 2SC3506 is designed for high-frequency applications, providing excellent performance in RF circuits.
  • Power Amplification: This transistor is capable of delivering high output power, making it ideal for power amplifier designs.
  • Efficiency: With its efficient design, the 2SC3506 minimizes power loss and heat generation during operation.
  • Reliability: The 2SC3506 is a reliable transistor with stable characteristics over a range of operating conditions.
  • Compact Size: The compact package of the 2SC3506 allows for easy integration into circuit designs with limited space.

Note: For detailed technical specifications, please refer to the 2SC3506 datasheet.

Application

  • RF Amplifiers: Ideal for use in RF amplifiers for communication systems, broadcast equipment, and radio transmitters.
  • High-Frequency Circuits: Suitable for high-frequency applications such as oscillator circuits and RF signal processing.
  • Power Amplification: Used in power amplifier designs for boosting signal strength in RF systems.

Functionality

The 2SC3506 transistor serves as a power amplifier in high-frequency circuits, amplifying signals with high power and efficiency. It plays a crucial role in enhancing the performance of RF systems.

Usage Guide

  • Power Connection: Connect the collector (C) pin to the power supply and the emitter (E) pin to the output load.
  • Input Signal: Apply the input signal to the base (B) pin for controlling the amplification of the transistor.
  • Biasing: Ensure proper biasing conditions for the transistor to operate within its specified parameters.

Frequently Asked Questions

Q: What is the maximum frequency at which the 2SC3506 can operate?
A: The 2SC3506 is capable of operating at frequencies up to 1 GHz, making it suitable for high-frequency applications.

Q: Does the 2SC3506 require a heat sink for operation?
A: Depending on the operating conditions and power levels, a heat sink may be necessary to dissipate heat effectively and maintain the transistor's performance.

Equivalent

For similar functionalities, consider these alternatives to the 2SC3506:

  • 2SC3356: Another high-frequency power amplifier transistor with comparable performance characteristics to the 2SC3506.
  • 2SC3856: This transistor offers high-power amplification capabilities and reliability similar to the 2SC3506.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Bulk Part Status Obsolete
Transistor Type NPN Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 800 V Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 2A, 5V
Power - Max 3 W Frequency - Transition 4MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Package / Case TOP-3F Supplier Device Package TOP-3F-A1
Base Product Number 2SC350

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