• 2SC2712-Y SOT23-3
2SC2712-Y SOT23-3

2SC2712-Y

Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin S-Mini

Quantity Unit Price(USD) Ext. Price
50 $0.014 $0.70
500 $0.011 $5.50
3000 $0.009 $27.00
6000 $0.008 $48.00
24000 $0.007 $168.00
51000 $0.007 $357.00

Inventory:5,925

*The price is for reference only.
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Overview of 2SC2712-Y

The 2SC2712-Y is a high-frequency low-noise NPN transistor designed for use in RF and microwave circuits. This transistor features low noise figure and high gain, making it ideal for applications in radio frequency amplifiers, oscillators, and mixers.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SC2712-Y transistor for a visual representation.

Key Features

  • High-Frequency Operation: The 2SC2712-Y is designed for operation in the RF and microwave frequency range, providing excellent performance in high-frequency circuits.
  • Low Noise Figure: This transistor offers a low noise figure, making it suitable for low-noise amplifier applications.
  • High Gain: With high gain characteristics, the 2SC2712-Y can amplify weak signals effectively in RF systems.

Note: For detailed technical specifications, please refer to the 2SC2712-Y datasheet.

Application

  • RF Amplifiers: Ideal for use in radio frequency amplifiers for wireless communication systems.
  • Oscillators: Suitable for oscillator circuits in RF and microwave applications.
  • Mixers: Can be used in mixer circuits to combine and frequency convert RF signals.

Functionality

The 2SC2712-Y transistor is specifically designed for high-frequency, low-noise applications. It provides reliable amplification and signal processing capabilities in RF and microwave circuits.

Usage Guide

  • Biasing: Properly bias the transistor based on the specifications provided in the datasheet for optimal performance.
  • Matching: Ensure proper impedance matching in RF circuits to maximize the efficiency of the 2SC2712-Y transistor.
  • Heat Dissipation: Implement sufficient heat sinking measures to dissipate heat generated during operation.

Equivalent

For similar functionalities, consider these alternatives to the 2SC2712-Y:

  • 2N5109: A high-frequency NPN transistor suitable for RF applications with similar characteristics to the 2SC2712-Y.
  • 2SC3356: This transistor offers low noise and high gain for RF and microwave circuits, providing performance comparable to the 2SC2712-Y.

2SC2712-Y

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 60 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 250 mV Maximum DC Collector Current 150 mA
Pd - Power Dissipation 150 mW Gain Bandwidth Product fT 80 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 125 C
Series 2SC2712 Brand Toshiba
Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 70
DC Current Gain hFE Max 700 Height 1.1 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Width 1.5 mm

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2SC2712-Y

Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin S-Mini

Inventory:

5,925