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2SC2335

High-power amplifier transistor suitable for a wide range of applications including audio and radio communicatio

Quantity Unit Price(USD) Ext. Price
50 $0.353 $17.65
500 $0.287 $143.50
1 $0.490 $0.49
10 $0.406 $4.06
100 $0.311 $31.10
1000 $0.274 $274.00

Inventory:7,140

*The price is for reference only.
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Overview of 2SC2335

The 2SC2335 is a silicon NPN epitaxial planar type transistor designed for use in high-frequency amplifier and oscillator applications. This transistor features high breakdown voltage and low distortion, making it suitable for various RF and high-frequency signal processing circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SC2335 transistor for a visual representation.

Key Features

  • High Breakdown Voltage: The 2SC2335 is designed to withstand high voltages, making it suitable for high-frequency applications.
  • Low Distortion: This transistor offers low distortion, ensuring high-quality signal amplification in RF circuits.
  • High-Frequency Operation: With its design optimized for high-frequency performance, the 2SC2335 is well-suited for RF amplifier and oscillator circuits.
  • Wide Operating Temperature Range: The 2SC2335 operates reliably across a wide temperature range, making it suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the 2SC2335 datasheet.

Application

  • RF Amplification: Ideal for use in RF amplifiers for high-frequency signal processing and transmission.
  • Oscillator Circuits: Suitable for oscillator applications where high-frequency stability and low distortion are required.
  • RF Transmitter Systems: Used in RF transmitter systems for amplifying and processing high-frequency signals.

Functionality

The 2SC2335 transistor is designed to amplify and process high-frequency signals with high breakdown voltage and low distortion, making it a reliable choice for RF and oscillator applications.

Usage Guide

  • Biasing: Proper biasing of the base terminal (B) is essential for optimal transistor operation. Biasing should be done according to the specifications provided in the datasheet.
  • Input and Output Connections: Connect the emitter (E) and collector (C) terminals to the input and output circuits as per the circuit design requirements.
  • Temperature Considerations: Ensure proper thermal management for the 2SC2335, especially in high-power or high-frequency applications, to maintain optimal performance and reliability.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the 2SC2335?
A: The 2SC2335 is designed for high-frequency operation and can support frequency ranges commonly used in RF and oscillator circuits.

Q: Can the 2SC2335 be used in VHF/UHF applications?
A: Yes, the 2SC2335's high-frequency performance makes it suitable for VHF/UHF applications requiring low distortion and high breakdown voltage.

Equivalent

For similar functionalities, consider these alternatives to the 2SC2335:

  • 2SC1971: Another NPN transistor designed for high-frequency applications with similar performance characteristics to the 2SC2335.
  • 2SC3357: This silicon NPN epitaxial planar transistor offers comparable high-frequency performance and low distortion for RF applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CONTINENTAL DEVICE INDIA LTD Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Collector Current-Max (IC) 7 A
Collector-Emitter Voltage-Max 400 V Configuration SINGLE
DC Current Gain-Min (hFE) 10 JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Element Material SILICON VCEsat-Max 1 V

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